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Room-temperature ferroelectricity in SrTiO3 nanodots array formed by an ac-bias field SCIE SCOPUS

Title
Room-temperature ferroelectricity in SrTiO3 nanodots array formed by an ac-bias field
Authors
Son, JYLee, JHJang, HM
Date Issued
2013-09-02
Publisher
AIP
Abstract
In its pure unstressed form, SrTiO3 (STO) remains quantum paraelectric down to 0 K. Herein, we demonstrate the ferroelectric STO nanodots array embodied by exploiting the idea of oxygen-vacancy-promoted ferroelectricity. First-principles calculations clearly support this idea. To practically activate the oxygen vacancies needed for the revelation of room-temperature ferroelectricity, we have applied an ac-bias field with various switching cycles at a conducting atomic-force-microscope tip. The STO nanodots with optimum polarization-switching characteristics have been implemented by suitably trading-off between the oxygen-vacancy-promoted polarization and the increasing leakage current with the switching cycle. (C) 2013 AIP Publishing LLC.
Keywords
ORDER-PARAMETER SATURATION; THIN-FILMS; POLARIZATION; TRANSITION; PEROVSKITES; FATIGUE
URI
https://oasis.postech.ac.kr/handle/2014.oak/14616
DOI
10.1063/1.4820407
ISSN
0003-6951
Article Type
Article
Citation
Applied Physical Lett, vol. 103, no. 10, page. 102901 - 102901, 2013-09-02
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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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