Nanomechanical Thermal Analysis of Indium Films Using Silicon Microcantilevers

Abstract

Indium thin films of different thicknesses were vacuum-deposited onto silicon microcantilevers. The temperature-dependent variations in the resonance frequency and deflection of the cantilevers were measured simultaneously and were used to determine the melting and crystallization temperatures of the indium films. The melting temperatures of the indium films were identical to that of bulk indium, whereas the crystallization temperatures decreased as the film thickness decreased. The reduction in crystallization temperature with decreasing thickness can be attributed to the tendency of thin films to homogeneously nucleate on nonwetting surfaces. Finally, the temperature-dependent variations in the Young's modulus and surface stress of the indium film were calculated. (C) 2012 The Japan Society of Applied Physics