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Cited 13 time in webofscience Cited 16 time in scopus
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dc.contributor.authorLee, Sko
dc.contributor.authorLee, Dko
dc.contributor.authorWoo, Jko
dc.contributor.authorCha, Eko
dc.contributor.authorPark, Jko
dc.contributor.authorHwang, Hko
dc.date.available2016-03-31T07:22:53Z-
dc.date.created2015-03-02-
dc.date.issued2014-10-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1022 - 1024-
dc.identifier.issn0741-3106-
dc.identifier.other2014-OAK-0000032397-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/13570-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleEngineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1109/LED.2014.2347925-
dc.author.googleLee, S-
dc.author.googleLee, D-
dc.author.googleWoo, J-
dc.author.googleCha, E-
dc.author.googlePark, J-
dc.author.googleHwang, H-
dc.relation.volume35-
dc.relation.issue10-
dc.relation.startpage1022-
dc.relation.lastpage1024-
dc.contributor.id10079928-
dc.publisher.locationUS-
dc.relation.journalIEEE ELECTRON DEVICE LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.contributor.localauthorHwang, H-
dc.contributor.nonIdAuthorLee, S-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorWoo, J-
dc.contributor.nonIdAuthorCha, E-
dc.contributor.nonIdAuthorPark, J-
dc.identifier.wosid000343011300016-
dc.date.tcdate2019-01-01-
dc.citation.endPage1024-
dc.citation.number10-
dc.citation.startPage1022-
dc.citation.titleIEEE ELECTRON DEVICE LETTERS-
dc.citation.volume35-
dc.identifier.scopusid2-s2.0-84907661107-
dc.description.journalClass1-
dc.description.wostc4-
dc.description.scptc5*
dc.date.scptcdate2018-05-121*

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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