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dc.contributor.authorSong, Jko
dc.contributor.authorLee, Dko
dc.contributor.authorWoo, Jko
dc.contributor.authorKoo, Yko
dc.contributor.authorCha, Eko
dc.contributor.authorLee, Sko
dc.contributor.authorPark, Jko
dc.contributor.authorMoon, Kko
dc.contributor.authorMisha, SHko
dc.contributor.authorPrakash, Ako
dc.contributor.authorHwang, Hko
dc.date.available2016-03-31T07:22:34Z-
dc.date.created2015-03-02-
dc.date.issued2014-06-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.35, no.6, pp.636 - 638-
dc.identifier.issn0741-3106-
dc.identifier.other2014-OAK-0000032422-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/13564-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleEffects of RESET Current Overshoot and Resistance State on Reliability of RRAM-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1109/LED.2014.2316544-
dc.author.googleSong, J-
dc.author.googleLee, D-
dc.author.googleWoo, J-
dc.author.googleKoo, Y-
dc.author.googleCha, E-
dc.author.googleLee, S-
dc.author.googlePark, J-
dc.author.googleMoon, K-
dc.author.googleMisha, SH-
dc.author.googlePrakash, A-
dc.author.googleHwang, H-
dc.relation.volume35-
dc.relation.issue6-
dc.relation.startpage636-
dc.relation.lastpage638-
dc.contributor.id10079928-
dc.publisher.locationUS-
dc.relation.journalIEEE ELECTRON DEVICE LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.contributor.localauthorHwang, H-
dc.contributor.nonIdAuthorSong, J-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorWoo, J-
dc.contributor.nonIdAuthorKoo, Y-
dc.contributor.nonIdAuthorCha, E-
dc.contributor.nonIdAuthorLee, S-
dc.contributor.nonIdAuthorPark, J-
dc.contributor.nonIdAuthorMoon, K-
dc.contributor.nonIdAuthorMisha, SH-
dc.contributor.nonIdAuthorPrakash, A-
dc.identifier.wosid000337136900010-
dc.date.tcdate2019-01-01-
dc.citation.endPage638-
dc.citation.number6-
dc.citation.startPage636-
dc.citation.titleIEEE ELECTRON DEVICE LETTERS-
dc.citation.volume35-
dc.identifier.scopusid2-s2.0-84901376809-
dc.description.journalClass1-
dc.description.wostc20-
dc.description.scptc14*
dc.date.scptcdate2018-05-121*

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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