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Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors SCIE SCOPUS

Title
Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors
Authors
Yoon, JSRim, TKim, JKim, KBaek, CKJEONG, YOON HA
Date Issued
2015-03-09
Publisher
AMER INST PHYSICS
Abstract
Random dopant fluctuation effects of gate-all-around inversion-mode silicon nanowire field-effect transistors (FETs) with different diameters and extension lengths are investigated. The nanowire FETs with smaller diameter and longer extension length reduce average values and variations of subthreshold swing and drain-induced barrier lowering, thus improving short channel immunity. Relative variations of the drain currents increase as the diameter decreases because of decreased current drivability from narrower channel cross-sections. Absolute variations of the drain currents decrease critically as the extension length increases due to decreasing the number of arsenic dopants penetrating into the channel region. To understand variability origins of the drain currents, variations of source/drain series resistance and low-field mobility are investigated. All these two parameters affect the variations of the drain currents concurrently. The nanowire FETs having extension lengths sufficient to prevent dopant penetration into the channel regions and maintaining relatively large cross-sections are suggested to achieve suitable short channel immunity and small variations of the drain currents. (C) 2015 AIP Publishing LLC.
URI
https://oasis.postech.ac.kr/handle/2014.oak/13234
DOI
10.1063/1.4914976
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 106, no. 10, 2015-03-09
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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