Controlling the self-doping of epitaxial graphene on SiC via Ar ion treatment
SCIE
SCOPUS
- Title
- Controlling the self-doping of epitaxial graphene on SiC via Ar ion treatment
- Authors
- Jee, HG; Jin, KH; Han, JH; Hwang, HN; Jhi, SH; Kim, YD; Hwang, CC
- Date Issued
- 2011-08-11
- Publisher
- AMER PHYSICAL SOC
- Abstract
- We present a simple but efficient way to control substrate-induced doping of graphene via mechanical deformations induced by Ar ions. Graphene on SiC is n-doped because of the substrate-to-graphene charge transfer. Using angle-resolved photoemission spectroscopy (ARPES), core level shift, and scanning tunneling microscopy (STM), the treatment with 0.5-keV Ar ions was found to reduce the charge transfer. First-principles calculations suggest that Stone-Wales defects among various defect structures are likely responsible for the change in the substrate-graphene charge transfer.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12259
- DOI
- 10.1103/PHYSREVB.84.075457
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 84, no. 7, page. 75457, 2011-08-11
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