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Cited 19 time in webofscience Cited 17 time in scopus
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dc.contributor.authorPark, JSko
dc.contributor.authorKang, SWko
dc.contributor.authorKim, Hko
dc.date.available2015-06-25T02:36:24Z-
dc.date.created2009-02-28-
dc.date.issued2006-01-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, no.3, pp.1327 - 1332-
dc.identifier.issn1071-1023-
dc.identifier.other2015-OAK-0000006054en_US
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/11286-
dc.description.statementofresponsibilityopenen_US
dc.format.extentpdfen_US
dc.languageEnglish-
dc.publisherA V S AMER INST PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleGrowth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1116/1.2198846-
dc.author.google"Park, JSen_US
dc.author.googleKang, SWen_US
dc.author.googleKim, H"en_US
dc.relation.issue3en_US
dc.relation.startpage1327en_US
dc.relation.lastpage1332en_US
dc.publisher.locationUSen_US
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.contributor.localauthorKim, H-
dc.contributor.nonIdAuthorPark, JS-
dc.contributor.nonIdAuthorKang, SW-
dc.identifier.wosid000238790000042-
dc.date.tcdate2019-01-01-
dc.citation.endPage1332-
dc.citation.number3-
dc.citation.startPage1327-
dc.citation.titleJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.identifier.scopusid2-s2.0-33744931887-
dc.description.journalClass1-
dc.description.wostc15-
dc.description.scptc13*
dc.date.scptcdate2018-10-274*

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김형준KIM, HYUNGJUN
Dept of Materials Science & Enginrg
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