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dc.contributor.authorLee, JLko
dc.contributor.authorKim, YTko
dc.contributor.authorYoo, YMko
dc.contributor.authorLee, GYko
dc.date.available2015-06-25T02:35:17Z-
dc.date.created2009-02-28-
dc.date.issued1999-01-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.17, no.3, pp.1034 - 1039-
dc.identifier.issn1071-1023-
dc.identifier.other2015-OAK-0000000770en_US
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/11250-
dc.description.statementofresponsibilityopenen_US
dc.format.extentpdfen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleAu/Ge-based Ohmic contact to an AlGaAs InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.author.googleLEE, JLen_US
dc.author.googleKIM, YTen_US
dc.author.googleLEE, GYen_US
dc.author.googleYOO, YMen_US
dc.relation.volume17en_US
dc.relation.issue3en_US
dc.relation.startpage1034en_US
dc.relation.lastpage1039en_US
dc.contributor.id10105416en_US
dc.publisher.locationUSen_US
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.contributor.localauthorLee, JL-
dc.contributor.nonIdAuthorKim, YT-
dc.contributor.nonIdAuthorYoo, YM-
dc.contributor.nonIdAuthorLee, GY-
dc.identifier.wosid000080853100023-
dc.date.tcdate2019-01-01-
dc.citation.endPage1039-
dc.citation.number3-
dc.citation.startPage1034-
dc.citation.titleJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.citation.volume17-
dc.identifier.scopusid2-S2.0-24644511226-
dc.description.journalClass1-
dc.description.wostc6-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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