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On the origin of a-type threading dislocations in GaN layers SCIE SCOPUS

Title
On the origin of a-type threading dislocations in GaN layers
Authors
Kwon, YBJe, JHRuterana, PNouet, G
Date Issued
2005-11
Publisher
A V S AMER INST PHYSICS
Abstract
The origin of threading dislocations (TDs) in GaN epitaxial layers grown on sapphire (0001) substrate is investigated using moire fringes from plan-view transmission electron microscopy. The studied samples are nucleation layers deposited at 560 degrees C for times ranging from 20 s to 180 s. This initial stage growth gives rise to islands which are randomly rotated and relaxed with misfit dislocations. The islands that start to coalesce from 60 s growth time keep this random orientation and this leads to the bending of 60 degrees misfit dislocations in the interface plane to form a-type TDs inside low angle boundaries. (c) 2005 American Vacuum Society.
URI
https://oasis.postech.ac.kr/handle/2014.oak/11226
DOI
10.1116/1.2049301
ISSN
0734-2101
Article Type
Article
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, vol. 23, no. 6, page. 1588 - 1591, 2005-11
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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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