A Study of p-type Perovskite Transparent Conductive Vanadium Oxide Thin Film using Alkaline-earth Metal Doping

Abstract

The ability to control of physical properties using doping inside oxides has been studied to enhance the performance of materials and to generate novel properties. Various physical properties can be controlled or improved by doping elements of various charge state and ionic sizes. In this regard, this topic focuses on the effect of alkaline earth metal doping on the lattice and charge, electrical transport and optical properties in strongly correlated perovskite oxide.

The topic of this paper is a study on alkaline earth metal doping for p-type transparent conducting oxide (TCO) exploration of LaVO3, a Mott-Hubbard insulator. We synthesized alkaline-earth metal doped-LaVO3 thin film, a p-type transparent conducting oxide with high optical transparency and high electrical conductivity. The 10nm LBVO on (001)-(LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) single crystal substrate has a resistivity of 1.6ⅹ10-4 Ω ·cm at room-temperature and transmittance of about 72%. This enhancement in optical and electrical properties seems to be due to the strain caused by the large Ba2+ ionic radius, so that LBVO has a high figure of merit as a p-type TCO. Our study suggests that elemental doping-induced strain has the potential to significantly influence the performance enhancement and modulation of TCOs. The present studied will (i) provide a trend for the relationship of crystal structural, electronic structure, and physical properties according to the element ionic radius (ii) provide opportunities for the design of novel p-type TCO materials with high figure of merit.