Highly Reliable Selection Behavior with Controlled Ag Doping of Nano-polycrystalline ZnO Layer for 3D X-Point Framework
SCIE
SCOPUS
- Title
- Highly Reliable Selection Behavior with Controlled Ag Doping of Nano-polycrystalline ZnO Layer for 3D X-Point Framework
- Authors
- Sahota, Akshay; Kim, Harrison Sejoon; Mohan, Jaidah; Jung, Yong Chan; Hernandez-Arriaga, Heber; Le, Dan N.; Kim, Si Joon; Lee, Jang-Sik; Ahn, Jinho; Kim, Jiyoung
- Date Issued
- 2022-01
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- IEEEIn this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputtering deposition technique. The TS selectors with extremely controlled doping of ~0.14 at. % Ag concentration showed remarkable electroforming (EF)-free selection behavior such as gigantic selectivity (~1011), extreme-low off-current (~10 fA), high on-current density (~1.6 MA/cm2), ultra-steep switching slope (~0.8 mV/decade), satisfactory endurance (>106), fast switch-on speed (~38 ns) and relaxation speed (~64 ns), and high device yield (~90%). Furthermore, selector devices showed reproducible selection behavior with stable threshold voltage (Vth) having merely 8% variances.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/109503
- DOI
- 10.1109/LED.2021.3130828
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 43, no. 1, page. 21 - 24, 2022-01
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- There are no files associated with this item.
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