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Imprinting well-controlled closed-nanopores in spin-on polymeric dielectric thin films SCIE SCOPUS

Title
Imprinting well-controlled closed-nanopores in spin-on polymeric dielectric thin films
Authors
Ree, MHYoon, JWHeo, KY
Date Issued
2006-02-21
Publisher
ROYAL SOC CHEMISTRY
Abstract
The use of low dielectric constant (low-k) interdielectrics in multilevel structure integrated circuits (ICs) can lower line-to-line noise in interconnects and alleviate power dissipation issues by reducing the capacitance between the interconnect conductor lines. Because of these merits, low-k interdielectric materials are currently in high demand in the development of advanced ICs. This article reviews recent developments in the imprinting of closed nanopores into spin-on materials to produce low-k nanoporous interdielectrics for the production of advanced ICs.
URI
https://oasis.postech.ac.kr/handle/2014.oak/10902
DOI
10.1039/B511301F
ISSN
0959-9428
Article Type
Article
Citation
JOURNAL OF MATERIALS CHEMISTRY, vol. 16, no. 7, page. 685 - 697, 2006-02-21
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이문호REE, MOONHOR
Dept of Chemistry
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