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Cited 7 time in webofscience Cited 9 time in scopus
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dc.contributor.authorHan, H-
dc.contributor.authorPark, YJ-
dc.contributor.authorBaik, S-
dc.contributor.authorLee, W-
dc.contributor.authorAlexe, M-
dc.contributor.authorHesse, D-
dc.contributor.authorGosele, U-
dc.date.accessioned2015-06-25T02:15:47Z-
dc.date.available2015-06-25T02:15:47Z-
dc.date.created2010-12-01-
dc.date.issued2010-08-15-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000022117en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10626-
dc.description.abstractEpitaxial ferroelectric Pb(Zr(0.2)Ti(0.8))O3 (PZT) nanoislands and nanocapacitors were fabricated by stencil mask-assisted pulsed laser deposition. By x-ray diffraction reciprocal space mapping it was observed that PZT nanoislands contain mainly c-domains and residual fractions of tilted and nontilted a-domains, while extended thin films contain only c-domains and tilted a-domains. The presence of nontilted a-domains manifests clearly that the misfit strain is significantly reduced in PZT nanoislands, compared to the thin film. Some of the a-domains turned out to be switchable under an external electric field due to the strain relaxation in the PZT nanocapacitors. The piezoresponse of PZT nanocapacitors was higher than that of continuous thin-film capacitors. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3475476]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleDomain structures and piezoelectric properties of Pb(Zr0.2Ti0.8)O-3 nanocapacitors-
dc.typeArticle-
dc.contributor.college포항공과대학교en_US
dc.identifier.doi10.1063/1.3475476-
dc.author.googleHan, Hen_US
dc.author.googlePark, YJen_US
dc.author.googleGosele, Uen_US
dc.author.googleHesse, Den_US
dc.author.googleAlexe, Men_US
dc.author.googleLee, Wen_US
dc.author.googleBaik, Sen_US
dc.relation.volume108en_US
dc.relation.issue4en_US
dc.contributor.id10078291en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.108, no.4-
dc.identifier.wosid000281857100099-
dc.date.tcdate2019-01-01-
dc.citation.number4-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume108-
dc.contributor.affiliatedAuthorBaik, S-
dc.identifier.scopusid2-s2.0-77956336654-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc3-
dc.description.scptc4*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusFERROELECTRIC THIN-FILMS-
dc.subject.keywordPlusZIRCONATE-TITANATE FILMS-
dc.subject.keywordPlusX-RAY-DIFFRACTION-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusSIZE-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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