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Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective

Title
Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective
Authors
LEE, SANGMINYOO, JONGMYUNGPARKJAEHYUKHwang H.
Date Issued
2020-07
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
This article proposes a thyristor conduction-insulated gate bipolar transistor (TC-IGBT) with a p-n-p base and an n-p-n collector to reduce turn-off loss. The parasitic p-collector/n-drift/floating p (FP)-layer/carrier stored (CS)-layer thyristor is activated by the double channel gate and the p-n-p base acts a hole barrier to increase hole concentration at the top side. The n-p-n collector is used for extracting electrons from the n-drift region to decrease hole concentration at the bottom side. Therefore, these two effects form linear and descending hole concentration distribution profile. As a result, the p-n-p base and the n-p-n collector in the TC-IGBT offers lower turn-off loss and turn-off fall time. TCAD numerical simulations show reductions up to 47% (3.15 mJ) and 52% (34 ns) in turn-off loss and turn-off fall time, respectively, when compared to a field stop (FS) IGBT with similar breakdown voltage, threshold voltage, and short circuit time. Therefore, this designed structure may be attractive for power electronics applications.
Keywords
DIOXIDE
URI
https://oasis.postech.ac.kr/handle/2014.oak/105583
ISSN
0018-9383
Article Type
Article
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 7, page. 2878 - 2883, 2020-07
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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