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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | WRITAM, BANERJEE | - |
| dc.contributor.author | Ilya V.Karpov | - |
| dc.contributor.author | Ashish Agrawal | - |
| dc.contributor.author | KIM, SEONGHUN | - |
| dc.contributor.author | 이승우 | - |
| dc.contributor.author | LEE, SANGMIN | - |
| dc.contributor.author | LEE, DONGHWA | - |
| dc.contributor.author | HWANG, HYUNSANG | - |
| dc.date.accessioned | 2021-06-01T04:22:05Z | - |
| dc.date.available | 2021-06-01T04:22:05Z | - |
| dc.date.created | 2021-03-04 | - |
| dc.date.issued | 2020-12-17 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/105464 | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | 2020 IEEE International Electron Devices Meeting | - |
| dc.relation.isPartOf | 2020 IEEE International Electron Devices Meeting | - |
| dc.title | Highly-stable (< 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 109 and High Endurance of 109 | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 2020 IEEE International Electron Devices Meeting | - |
| dc.identifier.wosid | 000717011600071 | - |
| dc.citation.conferenceDate | 2020-12-12 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.title | 2020 IEEE International Electron Devices Meeting | - |
| dc.contributor.affiliatedAuthor | WRITAM, BANERJEE | - |
| dc.contributor.affiliatedAuthor | KIM, SEONGHUN | - |
| dc.contributor.affiliatedAuthor | 이승우 | - |
| dc.contributor.affiliatedAuthor | LEE, SANGMIN | - |
| dc.contributor.affiliatedAuthor | LEE, DONGHWA | - |
| dc.contributor.affiliatedAuthor | HWANG, HYUNSANG | - |
| dc.identifier.scopusid | 2-s2.0-85102921899 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg