Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping
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SCOPUS
- Title
- Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping
- Authors
- Ahn, KH; Baik, S; Kim, SS
- Date Issued
- 2002-09-01
- Publisher
- AMER INST PHYSICS
- Abstract
- Effects of Ni or Mn doping in (Ba0.5Sr0.5)TiO3 thin films on leakage current behaviors of Pt/(Ba0.5Sr0.5)TiO3/Pt capacitors were investigated. The leakage current level was found to reduce significantly after the doping over a wide range of voltages and temperatures. The leakage current in an undoped capacitor was largely governed by the Fowler-Nordheim tunneling, and its onset voltage was greatly increased in doped capacitors. The suppression of leakage current in doped capacitors appeared to be caused by a widened depletion layer, which decreases the likelihood of tunneling. (C) 2002 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10509
- DOI
- 10.1063/1.1495526
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 92, no. 5, page. 2651 - 2654, 2002-09-01
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