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Cited 36 time in webofscience Cited 37 time in scopus
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dc.contributor.authorCho, TS-
dc.contributor.authorDoh, SJ-
dc.contributor.authorJe, JH-
dc.contributor.authorNoh, DY-
dc.date.accessioned2015-06-25T02:10:12Z-
dc.date.available2015-06-25T02:10:12Z-
dc.date.created2009-02-28-
dc.date.issued1999-08-15-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000000835en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10481-
dc.description.abstractThe crystallization of Ba-ferrite/sapphire(001) films of various thicknesses has been studied using synchrotron x-ray scattering, field emission scanning electron microscope, and atomic force microscope. In films thinner than 1000 Angstrom, Ba-ferrite amorphous precursor was crystallized into perpendicular grains keeping the magnetically easy c-axis normal to the film plane during annealing to 750 degrees C. In films thicker than 1000 Angstrom, however, acicular grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular grains. The behavior of the saturation magnetization and the intrinsic coercivity was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the epitaxial, c-axis oriented perpendicular grains near the film/substrate interfacial area. (C) 1999 American Institute of Physics. [S0021-8979(99)01016-6].-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleThickness dependence of the crystallization of Ba-ferrite films-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.370993-
dc.author.googleCHO, TSen_US
dc.author.googleDOH, SJen_US
dc.author.googleNOH, DYen_US
dc.author.googleJE, JHen_US
dc.relation.volume86en_US
dc.relation.issue4en_US
dc.relation.startpage1958en_US
dc.relation.lastpage1964en_US
dc.contributor.id10123980en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.86, no.4, pp.1958 - 1964-
dc.identifier.wosid000081720600026-
dc.date.tcdate2019-01-01-
dc.citation.endPage1964-
dc.citation.number4-
dc.citation.startPage1958-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume86-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0032621681-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc30-
dc.type.docTypeArticle-
dc.subject.keywordPlusHEXAFERRITE THIN-FILMS-
dc.subject.keywordPlusX-RAY-SCATTERING-
dc.subject.keywordPlusBARIUM HEXAFERRITE-
dc.subject.keywordPlusMEDIA-
dc.subject.keywordPlusSAPPHIRE-
dc.subject.keywordPlusINPLANE-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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