Structural changes of silicon dioxide films caused by synchrotron irradiation

Abstract

Effect of synchrotron radiation (SR) on silicon oxide films, deposited with remote plasma-enhanced chemical-vapor deposition, has been investigated, SR irradiation had an effect on the silicon dioxide structure which was confirmed by in situ infrared reflection adsorption spectroscopy. As the substrate temperature was increased to 373 K, the SiO2 structure became loose by irradiation and surface migration was observed. Surface migration of species induced by SR irradiation led to the increase of surface roughness and also the formation of hemispherical bubbles on the film surface, which was confirmed by atomic force microscope. Generation of oxygen-related paramagnetic defect was observed by electron spin resonance. (C) 1996 American Institute of Physics.