EFFECTS OF PHOTOCHEMICAL VAPOR-DEPOSITION PHOSPHORUS-NITRIDE INTERFACIAL LAYER ON ELECTRICAL CHARACTERISTICS OF AU-INP SCHOTTKY DIODES
SCIE
SCOPUS
- Title
- EFFECTS OF PHOTOCHEMICAL VAPOR-DEPOSITION PHOSPHORUS-NITRIDE INTERFACIAL LAYER ON ELECTRICAL CHARACTERISTICS OF AU-INP SCHOTTKY DIODES
- Authors
- CHUNG, WJ; JEONG, YH; KIM, GT; KIM, KI; KIM, ST
- Date Issued
- 1991-05-01
- Publisher
- AMER INST PHYSICS
- Abstract
- The enhancement of Schottky barrier heights on InP substrate using a thin layer of phosphorus-nitride (P3N5), grown by a direct photochemical vapor deposition process with a gaseous mixture of PCl3 and NH3, has been studied. A Au-Schottky diode formed using the in situ processes has a 50-angstrom P3N5 intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and a reverse leakage current of 5.0 x 10(-8) angstrom/cm2 at 1 V. The breakdown voltage was larger than 30 V. The thin-film/InP interface was investigated using x-ray photoelectron spectroscopy.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10444
- DOI
- 10.1063/1.348972
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 69, no. 9, page. 6699 - 6700, 1991-05-01
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