Open Access System for Information Sharing

Login Library

 

Article
Cited 24 time in webofscience Cited 24 time in scopus
Metadata Downloads

EFFECTS OF PHOTOCHEMICAL VAPOR-DEPOSITION PHOSPHORUS-NITRIDE INTERFACIAL LAYER ON ELECTRICAL CHARACTERISTICS OF AU-INP SCHOTTKY DIODES SCIE SCOPUS

Title
EFFECTS OF PHOTOCHEMICAL VAPOR-DEPOSITION PHOSPHORUS-NITRIDE INTERFACIAL LAYER ON ELECTRICAL CHARACTERISTICS OF AU-INP SCHOTTKY DIODES
Authors
CHUNG, WJJEONG, YHKIM, GTKIM, KIKIM, ST
Date Issued
1991-05-01
Publisher
AMER INST PHYSICS
Abstract
The enhancement of Schottky barrier heights on InP substrate using a thin layer of phosphorus-nitride (P3N5), grown by a direct photochemical vapor deposition process with a gaseous mixture of PCl3 and NH3, has been studied. A Au-Schottky diode formed using the in situ processes has a 50-angstrom P3N5 intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and a reverse leakage current of 5.0 x 10(-8) angstrom/cm2 at 1 V. The breakdown voltage was larger than 30 V. The thin-film/InP interface was investigated using x-ray photoelectron spectroscopy.
URI
https://oasis.postech.ac.kr/handle/2014.oak/10444
DOI
10.1063/1.348972
ISSN
0021-8979
Article Type
Article
Citation
JOURNAL OF APPLIED PHYSICS, vol. 69, no. 9, page. 6699 - 6700, 1991-05-01
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

정윤하JEONG, YOON HA
Dept of Electrical Enginrg
Read more

Views & Downloads

Browse