Analytic determination of the three-dimensional distribution of dislocations using synchrotron X-ray topography
SCIE
SCOPUS
- Title
- Analytic determination of the three-dimensional distribution of dislocations using synchrotron X-ray topography
- Authors
- Yi, JM; Chu, YS; Argunova, TS; Je, JH
- Date Issued
- 2006-02
- Publisher
- BLACKWELL PUBLISHING
- Abstract
- A technique, using a symmetric reflection via azimuthal rotation of a sample, is presented for characterization of the three-dimensional distribution of dislocations in single crystals. An analytic formula is derived to transform the three-dimensional geometry of a straight dislocation into its two-dimensional projection onto the detector plane. By fitting topographs to the formula, the orientations and locations of dislocations are quantitatively determined. The dislocations in a thermally stressed Si wafer are examined as an example.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10419
- DOI
- 10.1107/S0021889805038719
- ISSN
- 0021-8898
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED CRYSTALLOGRAPHY, vol. 39, page. 106 - 108, 2006-02
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