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Characterization of Positive Bias Temperature Instability Concerning Interfacial Layer Thickness of HfSiON/SiO2 nMOSFET
- Title
- Characterization of Positive Bias Temperature Instability Concerning Interfacial Layer Thickness of HfSiON/SiO2 nMOSFET
- Authors
- KANG, BONG KOO; Giyoun Roh; Young-Kyu Kown; Hyeok-Jin Kim
- Date Issued
- 2019-09-24
- Publisher
- ESRF2019
- Article Type
- Conference
- Citation
- ESRF2019, 2019-09-24
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg