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Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel
- Title
- Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel
- Authors
- KANG, BONG KOO; Hyeokjin Kim; Giyoun Roh
- Date Issued
- 2019-11-19
- Publisher
- IWDTF 2019
- Article Type
- Conference
- Citation
- IWDTF 2019, 2019-11-19
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg