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dc.contributor.authorSIM, SANGWAN-
dc.contributor.authorLEE, SEUNGMIN-
dc.contributor.authorMOON, JISOO-
dc.contributor.authorIN, CHIHUN-
dc.contributor.authorLEE, JEKWAN-
dc.contributor.authorNOH, MINJI-
dc.contributor.authorKIM, JEHYUN-
dc.contributor.authorJANG, WOOSUN-
dc.contributor.authorCHA, SOONYOUNG-
dc.contributor.authorSEO, SEUNGYOUNG-
dc.contributor.authorOH, SANGSHIK-
dc.contributor.authorKIM, DOHUN-
dc.contributor.authorSOON, ALOYSIUS-
dc.contributor.authorJO, MOON HO-
dc.contributor.authorCHOI, HYUNYONG-
dc.date.available2020-03-26T01:50:24Z-
dc.date.available2020-03-26T01:50:27Z-
dc.date.created2020-03-25-
dc.date.issued2020-03-18-
dc.identifier.issn2330-4022-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/101852-
dc.description.abstractResolving the complex interplay between surface and bulk response is a long-standing issue in the topological insulators (TIs). Some studies have reported surface-dominated metallic responses, yet others show semiconducting-like bulk photoconductance. Using ultrafast terahertz spectroscopy with the advent of Fermi-level engineered TIs, we discovered that such difference arises from the time-dependent competing process of two parameters, namely, the Dirac-carrier surface scattering rate and the bulk Drude weight. After infrared femtosecond pulse excitation, we observed a metal-like photoconductance reduction for the prototypical n-type Bi2Se3 and a semiconductor-like increased photoconductance for the p-type Bi2Se3. Surprisingly, the bulkinsulating Bi2Se3, which is presumably similar to graphene, exhibits a semiconducting-to-metallic phase apparent transition at 10 ps. The sign-reversed, yet long-lasting (>= 500 ps) metallic photoconductance was observed only in the bulk-insulating Bi2Se3, indicating that such dynamic phase transition is governed by the time-dependent competing interplay between the surface scattering rate and the bulk Drude weight. Our observations illustrate new photophysical phenomena of the photoexcited-phase transition in TIs and demonstrate entirely distinct dynamics compared to graphene and conventional gapped semiconductors.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectPHONON INTERACTION-
dc.subjectTHZ GENERATION-
dc.subjectCONVERSION-
dc.titlePicosecond Competing Dynamics of Apparent Semiconducting-Metallic Phase Transition in the Topological Insulator Bi2Se3-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.bibliographicCitationACS PHOTONICS, v.7, no.3, pp.759 - 764-
dc.identifier.wosid000526350900027-
dc.citation.endPage764-
dc.citation.number3-
dc.citation.startPage759-
dc.citation.titleACS PHOTONICS-
dc.citation.volume7-
dc.contributor.affiliatedAuthorSEO, SEUNGYOUNG-
dc.contributor.affiliatedAuthorJO, MOON HO-
dc.identifier.scopusid2-s2.0-85081402688-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-

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