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Cited 11 time in webofscience Cited 11 time in scopus
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Phase separation of Ni germanide formed on a Ge-on-Si structure for ge MOSFETs SCIE SCOPUS

Title
Phase separation of Ni germanide formed on a Ge-on-Si structure for ge MOSFETs
Authors
Zhang, YYOh, JBae, TSZhong, ZLi, SGJung, SYPark, KYLee, GWWang, JSMajhi, PLee, BHTseng, HHJeong, YHLee, HD
Date Issued
2008-01
Publisher
ELECTROCHEMICAL SOC INC
Abstract
Phase separation of Ni germanide due to the penetration of Ni atoms from Ni germanide in the Ge layer into the bottom Si substrate is reported. The orthorhombic-structure Ni germanide is formed in a Ge-on-Si substrate, which is promising for high-performance Ge p-channel metal-oxide-semiconductor field effect transistor (PMOSFETs). However, the Ni penetration and resulting Ni-rich Ni silicide formation happens when the Ni germanide becomes thick enough to touch the bottom Si substrate. The phase separation or Ni penetration observed in this work is believed to be due to the lower heat of formation of NiSi than NiGe. The Ni penetration must be controlled in fabricating source/drain regions for high-mobility Ge-on-Si MOSFETs. (C) 2007 The Electrochemical Society.
URI
https://oasis.postech.ac.kr/handle/2014.oak/10125
DOI
10.1149/1.2795836
ISSN
1099-0062
Article Type
Article
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 11, no. 1, page. H1 - H1, 2008-01
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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