Chemical vapor deposition of copper thin films with (hexafluoroacetylacetonate)Cu(allyltrimethylsilane)

Abstract

Metallorganic chemical vapor deposition of copper using a new organometallic precursor, (hexafluoroacetylacetonate)Cu(allyltrimethylsilane) was studied. It was confirmed that copper could be deposited at a substrate temperature as low as 60 degrees C. The copper film was deposited at a precursor vaporization temperature of 40-45 degrees C and a substrate temperature of 60-170 degrees C, resulting in a copper film with resistivity around 1.7-1.9 mu Omega cm. (C) 1998 The Electrochemical Society, Inc. S1099-0062(97)12-033-8.