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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Showing results 4 to 19 of 19

Article

Comparative studies of atomic layer deposition and plasma-enhanced atomic layer deposition Ta2O5 and the effects on electrical properties of in situ nitridationSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 46, no. 5B, page. 3224 - 3228, 2007-05

Article

Dendron-Modified Polystyrene Microtiter Plate: Surface Characterization with Picoforce AFM and Influence of Spacing between Immobilized Amyloid Beta ProteinsSCIESCOPUS

LANGMUIR, vol. 24, no. 24, page. 14296 - 14305, 2008-12-16

Article

Dependence of electrical properties on interfacial layer of Ta2O5 filmsSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 84, no. 12, page. 2865 - 2868, 2007-12

Article

Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygenSCIESCOPUS

THIN SOLID FILMS, vol. 516, no. 21, page. 7345 - 7349, 2008-09-01

Article

Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2SCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 5, page. G33 - G36, 2009-01

Article

Electrical properties of atomic layer deposition HfO2 and HfOxNy on si substrates with various crystal orientationsSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 155, no. 4, page. H267 - H271, 2008-01

Article

Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer depositionSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 90, no. 6, 2007-02-05

Article

Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layerSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 96, no. 8, 2010-02-22

Article

HFO2/HFOXNY/HFO2 GATE DIELECTRIC FABRICATED BY IN SITU OXIDATION OF PLASMA-ENHANCED ATOMIC LAYER DEPOSITION HFN MIDDLE LAYERSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 8, page. G109 - G113, 2009-01

Article

Hybrid nanofabrication processes utilizing diblock copolymer nanotemplate prepared by self-assembled monolayer based surface neutralizationSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 26, no. 1, page. 189 - 194, 2008-01

Article

Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayersSCIESCOPUS

ORGANIC ELECTRONICS, vol. 9, no. 6, page. 1140 - 1145, 2008-12

Article

Interface roughness effect between gate oxide and metal gate on dielectric propertySCIESCOPUS

THIN SOLID FILMS, vol. 517, no. 14, page. 3892 - 3895, 2009-05-29

Article

Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic ApplicationSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 5, page. D188 - D192, 2009-01

Article

The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridationSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 104, no. 6, 2008-09-15

Article

Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrodeSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 85, no. 1, page. 39 - 44, 2008-01

Article

Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursorsSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 9, no. 6, page. G191 - G194, 2006-01

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