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Article
Method of extracting effective channel length for nano-scale n-MOSFETsSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 53, no. 10, page. 1076 - 1085, 2009-10

Article
Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, no. 8, 2016-08

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