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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Article

Analysis of the nucleation of GaN layers on (0001) sapphireSCIESCOPUS

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 93, no. 1-3, page. 177 - 180, 2002-05-30

Article

Annealing behavior of Pd/GaN (0001) microstructureSCIESCOPUS

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 82, no. 1-3, page. 105 - 107, 2001-05-22

Conference

Au catalyzed structural and electrical evolution of Ni/Au contact to GaN

, 2001-11

Article

Au catalyzed structural and electrical evolution of Ni/Au contact to GaNSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 188, no. 1, page. 379 - 382, 2001-11

Article

Ba enrichment on the surface of oxide cathodesSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 21, no. 5, page. 2184 - 2187, 2003-09

Article

Catalytic role of Au in Ni/Au contact on GaN(0001)SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 78, no. 24, page. 3773 - 3775, 2001-06-11

Article

Defects and nucleation of GaN layers on (0001) sapphireSCIESCOPUS

JOURNAL OF PHYSICS-CONDENSED MATTER, vol. 14, no. 48, page. 13019 - 13023, 2002-12-16

Article

Effect of ultra-thin buffer on the structure of highly mismatched epitaxial ZnO during sputter growthSCIESCOPUS

APPLIED SURFACE SCIENCE, vol. 241, no. 1-2, page. 261 - 265, 2005-02-28

Article

Formation of magnetic Ni nanoparticles in x-ray irradiated electroless solutionSCIESCOPUS

NANOTECHNOLOGY, vol. 15, no. 6, page. S389 - S392, 2004-06

Article

High-temperature structural behavior of Ni/Au contact on GaN (0001)SCIESCOPUS

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 4, page. 1 - 7, 2001-01

Article

In-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001)SCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 90, no. 5, page. 2191 - 2194, 2001-09-01

Article

Initial stages of GaN buffer layer growth on (0001) sapphire by metalorganic chemical vapour depositionSCIESCOPUS

DIAMOND AND RELATED MATERIALS, vol. 11, no. 3-6, page. 901 - 904, 2002-03

Article

Metal/GaN reaction chemistry and their electrical propertiesSCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 241, no. 12, page. 2771 - 2774, 2004-10

Conference

Metal/GaN reaction chemistry and their electrical properties

, 2004-10

Article

Microstructure of GaN nucleation layer during initial stage MOCVD growthSCIESCOPUS

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 82, no. 1-3, page. 108 - 110, 2001-05-22

Article

Microstructures of GaN islands on a stepped sapphire surfaceSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 91, no. 7, page. 4233 - 4237, 2002-04-01

Article

On the origin of a-type threading dislocations in GaN layersSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, vol. 23, no. 6, page. 1588 - 1591, 2005-11

Article

Structural and electrical properties of Zn(Al)O layers for transparent metal oxide applicationsSCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol. 244, no. 5, page. 1583 - 1588, 2007-05

Article

Structural evolution of GaN nucleation layers during metal-organic chemical vapour deposition growthSCIE

INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 169, page. 281 - 284, 2001-01

Article

Twin formation in sputter-grown ZnO/Al2O3(0001) epitaxial film: A real time x-ray scattering studySCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, vol. 22, no. 5, page. 2159 - 2162, 2004-09

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