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Browsing by  AuthorRhee, SW

전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하
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Showing results 198 to 205 of 205
Article
The effect of additives on the viscosity of dimethylaluminum hydride and FTIR diagnostics of the gas-phase reactionSCIESCOPUS

THIN SOLID FILMS, vol. 348, no. 1-2, page. 130 - 133, 1999-07-06

Article
The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursorSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 8, page. 1028 - 1034, 2001-08

Article
The effect of He or Ar/O-2 plasma treatment on Si surface prior to chemical vapor deposition of SiO2SCIESCOPUS

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 15, no. 1, page. 37 - 41, 2004-01

Article
The electrical and interface properties of metal-ferroelectric (lanthanum substituted bismuth titanate: BLT)-insulator-semiconductor (MFIS) structures with various insulatorsSCIESCOPUS

JOURNAL OF MATERIALS SCIENCE, vol. 42, no. 2, page. 652 - 659, 2007-01

Article
The fabrication of highly uniform ZnO/CdS core/shell structures using a spin-coating-based successive ion layer adsorption and reaction methodSCIESCOPUS

NANOTECHNOLOGY, vol. 21, no. 32, 2010-08-13

Article
The physical/chemical properties and electrode performance variations of SWNT films in consequence of solution based surfactant elimination processesSCIESCOPUS

ORGANIC ELECTRONICS, vol. 14, no. 11, page. 2962 - 2972, 2013-11

Article
Thermal stability of chemical vapor deposition grown W and WNx thin films in low-k integration structureSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 24, no. 3, page. 1428 - 1431, 2006-05

Article
Yttrium-substituted bismuth titanate (Bi4-xYxTi3O12) thin film for use in non-volatile memoriesSCIESCOPUS

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 15, no. 4, page. 231 - 234, 2004-04

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