Open Access System for Information Sharing

Browse by Researchers

BAEK, CHANG KI (백창기)

Dept. of Creative IT Engin.(창의IT융합공학과)

Field(s)

Show more items...

H-INDEX

Chart.

Keyword

SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||SONOS memory cell:4||MOSFETS:4||DEVICES:3||Nanowires:3||SIMULATION:3||effects of trapped holes:2||profile of hole trapping:2||IMPACT:2||OXIDE:2||shortchannel effects (SCEs):2||ERASE:2||FinFET:2||s equation:2||MODEL:2||3D Poisson&apos:2||POISSONSEQUATION:2||Doping (additives):2||Low frequency noise:2||ARRAYS:2||Field effect transistors:2||Silicon:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||ELECTRON:2||phase:2||low frequency noise:2||nonCartesian mesh:2||Phase change memory:2||effects of localized electron trapping:2||DRAIN:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||spatial and temporal evolution of trapped charge:2||forward and reverse reading:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||In2Se3 nanowire:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||MOS DEVICES:1||PMOSFETS:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||Biosensors:1||BioFETs:1||indium selenide:1||THINFILMS:1||Nanowire FET:1||switched biasing 1/f noise:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||VP40 matrix protein:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||interface states:1||edge profile effect:1||erase threshold voltage distribution:1||MOSFET:1||oxide trap density:1||PERFORMANCE:1||MOBILITY MODEL:1||SI MICROWIRE:1||memristor biosensor:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||MECHANISM:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||LABELFREE:1||BIOSENSORS:1||SENSORS:1||LEAKAGE:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||ON/OFF current:1||asymmetric channel doping:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||OPTICALPROPERTIES:1||HEATTREATMENT:1||PLANAR:1||Drain current:1||honeycomb nanowires:1||Bandtoband (BTB) generation rate:1||Photoconductance:1||Si nanowire:1||Optical materials:1||External quantum efficiency:1||charge pumping:1||capacitive coupling equation with offset voltage:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||In2Se3:1||SEMICONDUCTOR:1||FIELDEFFECT TRANSISTORS:1||Thermionic emission:1||Electrical parameter:1||Ebola detection:1||BIOFILM FORMATION:1||Transistors:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||photodetectors:1||ELECTRONICS:1||ENHANCEMENT:1||Physical phenomena:1||capacitance:1||DEPOSITION:1||Indirect band gap:1||interfacial trapping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Electrical Characteristics:1||NANOSTRUCTURES:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||SILICON NANOWIRES:1||INDIUM:1||PHOTOVOLTAIC APPLICATIONS:1||silicon nanowire field effect transistor:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Hot electrons:1||Light:1||Photons:1||Photodetectors:1||

Open Access System for Information Sharing

H-INDEX

Keyword

Publication & Time Cited Count(For the Last 5 years)

Browse

Publication & Time Cited Count
(For the Last 5 years)