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BAEK, CHANG KI (백창기)
Dept. of Creative IT Engin.(창의IT융합공학과)
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MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FET:2||flash EEPROM cell:2||MEMORY CELLS:2||INJECTION:2||Field effect transistors:2||DEGRADATION:1||GENERATION:1||NORtype flash EEPROM:1||drain turnon:1||high speed programming:1||UNIFIED MOBILITY MODEL:1||recesschannelarray transistor (RCAT):1||triplegate:1||remote plasma nitrided oxide (RPNO):1||pH sensors:1||VP40 matrix protein:1||MOS DEVICES:1||PMOSFETS:1||Biosensors:1||BioFETs:1||OPTICALABSORPTION:1||Threshold voltage:1||Current drivability:1||MINIMAL INHIBITORY CONCENTRATIONS:1||PSEUDOMONASAERUGINOSA:1||coreshell:1||3D numerical simulation:1||Optical properties:1||RECOVERY:1||low power programming:1||overerase:1||edge profile effect:1||erase threshold voltage distribution:1||interface states:1||MOSFET:1||oxide trap density:1||memristor biosensor:1||High intensity light:1||IIIV semiconductors:1||Electron trapping:1||SI MICROWIRE:1||ESCHERICHIACOLI:1||PH:1||NANOPARTICLES:1||heterojunction:1||Photodetectors (PDs):1||Surrounding materials:1||ramped gate softprogramming:1||Flash electrically erasable programmable readonly memory (EEPROM) cell:1||nonplanar MOS:1||GATE:1||ionsensitive field effect transistor:1||driftdiffusion (DD) and densitygradient (DG) method:1||MECHANISM:1||LABELFREE:1||BIOSENSORS:1||Random dopant fluctuation:1||Standard deviation:1||ONACHIP:1||Asymmetric structures:1||Wavelengthselective properties:1||substrate bias effect:1||EEPROM:1||multibit softprogramming:1||FLUCTUATIONS:1||asymmetric channel doping:1||ON/OFF current:1||threshold voltage (V(TH)):1||FIELD:1||gummel iteration:1||random discrete dopant fluctuation (DDF):1||saddle:1||Dynamic random access memory (DRAM):1||Recessed channel array transistor (RCAT):1||honeycomb nanowires:1||Photoconductance:1||Si nanowire:1||RANDOM TELEGRAPH NOISE:1||SUBMICROMETER MOSFETS:1||EFFECT SENSORS:1||1/F NOISE:1||PLANAR:1||Drain current:1||Bandtoband (BTB) generation rate:1||Optical materials:1||External quantum efficiency:1||capacitive coupling equation with offset voltage:1||charge pumping:1||shortchannel effect (SCE):1||RCFinFET:1||NOISE:1||Electronic noses:1||Obliqueangle deposition:1||Ebola detection:1||Transistors:1||random telegraph signal (RTS):1||3D device simulation:1||local mobility fluctuation:1||CARBON NANOTUBE:1||Thermionic emission:1||Electrical parameter:1||BIOFILM FORMATION:1||Refractive index:1||Waveguides:1||Optical characteristics:1||Waveguide properties:1||dynamic randomaccess memory (DRAM):1||EXTRACTION:1||recessedchannel:1||REMOTE PLASMA NITRIDATION:1||Metal oxide:1||capacitance:1||Indirect band gap:1||interfacial trapping:1||Silicon Nanowire:1||ISFETs:1||INTERFACES:1||DNA:1||ENHANCEMENT:1||Physical phenomena:1||DEPOSITION:1||densitygradient (DG) model:1||threshold voltage distribution:1||MEMORY:1||CELL TRANSISTOR:1||Leakage current:1||CHARGEPUMPING TECHNIQUE:1||Nanoscale pn junction:1||Energy gap:1||Semiconducting silicon:1||Semiconductor doping:1||NBTI DEGRADATION:1||GATE OXIDES:1||LIFETIME:1||Electrical Characteristics:1||Saturation regime:1||Parasitic resistances:1||Si nanowire field effect transistors:1||FIELDEFFECT TRANSISTOR:1||VLSI MOSFETS:1||PART I:1||recess channel array transistor (RCAT):1||retention time distribution:1||saddle fin (SFin):1||subthreshold slope (SS):1||RETENTION TIME DISTRIBUTION:1||DEPENDENCE:1||Multifrequency and multitemperature charge pumping (CP):1||sensor reliability:1||honeycomb structure:1||ELECTRODE:1||Gas sensor:1||silicon nanowire field effect transistor:1||Hot electrons:1||Light:1||REFERENCE ELECTRODES:1||BIOMARKER DETECTION:1||PHOTOVOLTAIC APPLICATIONS:1||ANTIMICROBIAL AGENTS:1||CELLCULTURE:1||deformation potential theory:1||strain:1||tunneling fieldeffect transistor (TFET):1||Photons:1||Photodetectors:1||MOSFETS:5||SONOS memory cell:4||DEVICES:4||SIMULATION:4||phase:4||ELECTRON:3||low frequency noise:3||Nanowires:3||IMPACT:3||forward and reverse reading:2||effects of trapped holes:2||profile of hole trapping:2||OXIDE:2||shortchannel effects (SCEs):2||PERFORMANCE:2||LEAKAGE:2||ERASE:2||FinFET:2||s equation:2||SENSORS:2||In2Se3 nanowire:2||Low frequency noise:2||3D Poisson&apos:2||POISSONSEQUATION:2||INDIUM:2||Silicon:2||MODEL:2||OPTICALPROPERTIES:2||HEATTREATMENT:2||ARRAYS:2||hot hole injection erase:2||cell scaling limit:2||tapered fin:2||trigate FinFET:2||FIELDEFFECT TRANSISTORS:2||In2Se3:2||SEMICONDUCTOR:2||Phase change memory:2||nonCartesian mesh:2||photodetectors:2||ELECTRONICS:2||effects of localized electron trapping:2||DRAIN:2||SiO2 passivation:2||Chalcogenide:2||scaling length:2||DEPLETED SOI MOSFETS:2||Doping (additives):2||NANOSTRUCTURES:2||SILICON NANOWIRES:2||spatial and temporal evolution of trapped charge:2||MOBILITY MODEL:2||THINFILMS:2||indium selenide:2||switched biasing 1/f noise:2||Nanowire FE
