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KIM, TAE HWAN (김태환)

Dept of Physics(물리학과)

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scanning tunneling microscopy:4||GROWTH:4||WIRES:2||STRIPES:2||scanning tunneling microscope:2||nanostructures:2||NANOWIRES:2||METALS:2||MODEL:2||DEVILS STAIRCASE:2||BONDS:2||SI(001):2||CRYSTAL:2||IRTE2:2||SURFACE:2||ELECTRICALRESISTIVITY:2||STATE:2||CONDUCTIVITY:2||BANDSTRUCTURE:2||epitaxy:2||TRANSPORT:2||TRANSITION:2||FILMS:2||REFLECTION:2||electron transport:1||DIMENSIONS:1||Nanotetrapod:1||ferroelectric:1||scanning probe microscopy:1||EXTERNAL SURFACES:1||SUPERCONDUCTIVITY:1||POLYCRYSTALLINE FILMS:1||Electronic transport:1||SILICON:1||polarons:1||CARBON NANOTUBES:1||MANGANITES:1||TRANSMISSION:1||field effect:1||CARBONNANOTUBE:1||nanowire:1||SURFACES:1||TEMPERATUREDEPENDENCE:1||ISLANDS:1||YJUNCTIONS:1||SRTIO3:1||SEPARATION:1||Grain boundary:1||resistance:1||ROOMTEMPERATURE:1||SCATTERING:1||defects:1||SILICIDES:1||selfassembly:1||CHROMIUM OVERLAYERS:1||EPITAXIALGROWTH:1||NUCLEATION:1||band alignment:1||FIELDEFFECT TRANSISTORS:1||DIELECTRICS:1||NANOFILMS:1||electronic coupling:1||ELECTRON:1||phase separation:1||INSTABILITY:1||interconnect:1||copper:1||MULTILAYERS:1||TETRAPODS:1||localization:1||electronic density of states:1||ATOMICSTRUCTURE:1||SCANNINGTUNNELINGMICROSCOPY:1||AU:1||CU:1||RESISTIVITY:1||strongly correlated materials:1||fourprobe measurement:1||METALLICFILMS:1||INTERCONNECTS:1||nonvolatile memory:1||MEMORY:1||NANOCRYSTALS:1||suicide nanowires:1||onedimensional conductance:1||structural properties:1||W(110):1||surface structure:1||AG:1||AUGMENTEDWAVE METHOD:1||DENSITY WAVE:1||FERROMAGNET:1||electron microscopy:1||SR3RU2O7:1||PHYSICS:1||

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(For the Last 5 years)