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KIM, SEON HYO (김선효)

Ferrous & Energy materials Technology(철강 · 에너지소재대학원)

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THINFILMS:14||ZnO:12||ABSORPTION FINESTRUCTURE:8||ARRAYS:7||GAN:7||MOLECULARBEAM EPITAXY:7||MICROSTRUCTURE:6||NANOWIRES:6||Structure:6||BEHAVIOR:6||sputtering:5||nanorod:5||Nanorod:5||GROWTH:5||MOCVD:4||MECHANISM:4||TEMPERATURE:4||ELECTROLUMINESCENCE:4||EPITAXIALGROWTH:4||MNO:3||DEPENDENCE:3||KINETICS:3||MOLD:3||SEMICONDUCTORS:3||STEEL:3||LAYERS:3||RADIATIVE HEATTRANSFER:3||INITIAL SOLIDIFICATION:3||OPTICALPROPERTIES:3||NONISOTHERMAL CRYSTALLIZATION:3||SURFACE QUALITY:3||film:3||phase transformation:3||HOT THERMOCOUPLE TECHNIQUE:3||continuous casting:3||SEMICONDUCTOR:3||EXAFS:3||EQUILIBRIA:3||helicon wave plasma:3||structure:3||SENSING CHARACTERISTICS:3||SI:3||TENSILE PROPERTIES:2||MECHANICALPROPERTIES:2||OPTICAL BASICITY:2||ferromagnetic:2||FERROMAGNETISM:2||CRNI SYSTEM:2||WT PCT NI:2||solidification microstructure:2||FLOW:2||ferrite grain size:2||STRENGTH:2||ALUMINUM:2||Zinc compounds:2||GROWTHMECHANISM:2||ZnFeO:2||DILUTED MAGNETIC SEMICONDUCTORS:2||SOLUBILITY:2||martensite volume fraction:2||MORPHOLOGY:2||ALLOY:2||ohmic contact:2||SILICONCARBIDE:2||Semiconducting IIVI materials:2||OXIDE:2||steels:2||dissolution kinetics:2||SOLIDIFICATION:2||casting:2||annealing:2||step quenching:2||Ti/Al/SiC:2||ion implantation:2||metal organic chemical vapor deposition (MOCVD):2||GAMMA/ALPHA/GAMMADIFFUSION COUPLES:2||PHASETRANSFORMATIONS:2||MENISCUS:2||LIGHTEMITTINGDIODES:2||ROOMTEMPERATURE:2||boron nitride:2||holedoping:2||strip casting:2||STEEL WELD METAL:2||AUSTENITIC STAINLESSSTEELS:2||GLASSCERAMICS:2||TEREPHTHALATE):2||crystallinity:2||SLAG:2||slag:2||dynamic deformation:2||ADIABATIC SHEAR BANDS:2||XPS:2||pSiC:2||BASICITY:2||ALPHAPHASE:2||TRACER DIFFUSION:2||NUCLEATION:2||SYSTEM:2||LIQUIDIRON:2||Metalorganic chemical vapor deposition:2||light emitting diodes:2||dual phase steel:2||TiN/Al/SiC:2||DMS:2||delta ferrite:2||EPITAXY:2||buffer layer:2||SAPPHIRE:2||TOUGHNESS:2||DOPED ZNO:2||Film:2||PULSEDLASER DEPOSITION:2||M23C6:2||FILM:2||ORIENTATION:2||evaporation:2||HEATTRANSFER:2||MGO:1||METAL:1||STRUCTURALPROPERTIES:1||CSA(C(4)A(3)(S)overbar):1||BLASTFURNACE SLAG:1||Enthalpy:1||Infrared radiation:1||Molds:1||MAGNESIUM:1||FETO:1||Kaufman ion source:1||bubble:1||FLUIDFLOW:1||homoepitaxial growth:1||diluted magnetic semiconductors:1||oscillation marks:1||low temperature buffer:1||CPLANE SAPPHIRE:1||THERMODYNAMIC ASSESSMENT:1||glass forming ability:1||Crystal structure:1||ABSENCE:1||KEDGE:1||antifouling membrane:1||photocatalytic bactericidal effect:1||biofouling:1||thermodynamic behavior:1||NITRIDE:1||homobuffer:1||EXTENDED XRAY:1||EMISSION:1||PERFORMANCE:1||secondary steelmaking refining slag:1||Heat transfer:1||Iron:1||Scanning electron microscopy:1||Diameter of particle:1||Extinction coefficients:1||triple grounded grid configuration:1||hydrogen incorporation:1||helicon wave plasma CVD:1||microstructure and orientation:1||SULFIDE CAPACITIES:1||FILMS:1||PHOTOCATALYTIC ACTIVITY:1||permeability:1||Diluted magnetic semiconductor:1||PTYPE GAN:1||PROPERTY:1||FREQUENCY:1||(GA,MN)AS:1||frequency:1||meniscus:1||SIO2/SI(100):1||LAYER:1||LASER:1||photoluminescense:1||ZnO/ZnMgO:1||ULTRAVIOLETLASER EMISSION:1||SPRAYPYROLYSIS:1||carbon:1||pig iron:1||DIFFERENTIAL THERMALANALYSIS:1||CRYSTALLINITY:1||AL:1||BEHAVIORS:1||OXIDATION:1||ZNO NANORODS:1||PREEDGE:1||HomoBuffer:1||TRANSISTORS:1||EDGE:1||WASTES:1||PRODUCTS:1||Compositional changes:1||Heat flux densities:1||Scattering coefficient:1||METALMATRIX COMPOSITES:1||BORONNITRIDE:1||chargetransferred fast neutral:1||Photoluminescence:1||SLAB:1||PHASE EPITAXIALGROWTH:1||Solidification microstructure:1||CHEMICALVAPORDEPOSITION:1||ALUMINUM NITRIDE:1||NANOWIRE:1||mold powder:1||mold oscillation:1||negative strip time:1||CONTINUOUSCASTING MOLD:1||GREEN:1||cleanliness:1||CYCLIC COMPRESSION:1||INDUCED PLASTICITY STEEL:1||PHASE:1||MAGNETIC SEMICONDUCTORS:1||CODOPED ZNO:1||SCATTERING:1||TiO2 hybrid membrane:1||SEMICONDUCTOR PHOTOCATALYSIS:1||Epitaxial Growth:1||growth mechanism:1||MNDOPED ZNO:1||NaCl:1||ZnMgO:1||ZNO:1||POLYPROPYLENE:1||Mie scattering theory:1||hydration:1||CEMENT:1||DIFFERENTIAL SCANNING CALORIMETRY:1||TECHNOLOGIES:1||excited neutral nitrogen molecule:1||nucleation and growth:1||ATOMICFORCE MICROSCOPY:1||ENERGY:1||XAFS CHARACTERIZATION:1||ultralowcarbon steel:1||MN CONCENTRATION:1||Continuous casting:1||FABRICATION:1||DOPED ZINCOXIDE:1||RELEVANCE:1||ultralowcarbon steel:1||OSCILLATIONMARK FORMATION:1||SLAB SURFACE:1||atomic force microscopy (AFM):1||SPECTROSCOPY:1||nanostructured alloy:1||SLAGS:1||COMPLEXES:1||Ion implantation:1||TiO2 nanoparticles:1||manganese:1||liquid iron:1||DEPHOSPHORIZATION:1||ettringite:1||HYDRATION:1||Crystalline materials:1||MICROSTRUCTURAL DEVELOPMENT:1||REGULAR SOLUTION MODEL:1||luminescent property:1||IRONOXIDE:1||ALUMINUM OXYGEN EQUILIBRIUM:1||Hydrogen implantation:1||XAFS:1||ANATASE:1||nozzle:1||ART.:1||crystal structure:1||ALIGNED ZNO NANORODS:1||codoped zinc oxide:1||modification ratio:1||FLUX FILM:1||helicon wave oxygen plasma:1||reoxidation:1||CARBIDE:1||ALUMINA:1||hot pressing:1||MAGNETICPROPERTIES:1||REVERSEOSMOSIS MEMBRANES:1||phosphorus:1||epitaxial growth:1||THINFILM:1||Buffer layer:1||DEPOSITION:1||IRRADIATION:1||bandgap:1||SYNDIOTACTIC POLYPROPYLENES:1||Fourier transformations:1||Radiative heat transfer:1||NITRIDE THINFILMS:1||GRAPHITE:1||BN FILMS:1||epilayer:1||MELTS:1||Sputtering:1||CELLS:1||porous refractory:1||Mndoped GaN:1||Hook:1||Oscillation marks:1||Ultra low carbon steel:1||OSCILLATION MARKS:1||zinc oxide:1||ROOMTEMPERATURE FERROMAGNETISM:1||ELECTRICALPROPERTIES:1||lubrication:1||models:1||plant experiments:1||EXCITEDPLASMA:1||PHOTOLUMINESCENCE:1||ENHANCEMENT:1||QUALITY:1||carbonate:1||activity coefficient:1||MnO:1||CRACKGROWTH:1||characterization:1||STABILIZED STAINLESSSTEEL:1||CASTING MOLD:1||Magnetic materials:1||NANOSTRUCTURES:1||ladle slag:1||SYSTEMS:1||GaN:1||Solution growth:1||MGXZN1XO:1||GENERALTHEORY:1||Fourier transforms:1||Glass:1||X ray diffraction analysis:1||SIO2:1||IIIVNITRIDE:1||WURTZITE:1||deposition temperature:1||Interfaces:1||STATE:1||HETEROSTRUCTURES:1||Spintronics:1||(GA,MN)N:1||SPINTRONICS:1||CRACKS:1||silicon:1||gallium:1||thin film:1||flux:1||positive strip time:1||CONTINUOUS CASTER:1||SPEED:1||SIMULATOR:1||SEM:1||MBE:1||CERAMICS:1||sapphire:1||nitrides:1||NANORODS:1||IV:1||VAPORDEPOSITION:1||extended xray absorption fine structure (EXAFS):1||photoluminescence (PL):1||Heat flux:1||Fluxes:1||Kaufmann ion source:1||STRESS:1||IRON:1||PLASMA:1||ALLOYS:1||XRAY:1||WATER MODEL:1||ASYMMETRY:1||MBE GROWTH:1||Subsurface quality:1||epitaxy:1||ZNO FILMS:1||ORIGIN:1||stroke:1||casting speed:1||EBSD:1||photonic devices:1||RF power:1||FetO:1||carbide:1||DEOXIDATION REACTION:1||high resolution Xray diffraction:1||CRYSTALGROWTH:1||RATES:1||

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