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YEOM, HAN WOONG (염한웅)
Dept of Physics(물리학과)
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STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||STATE:3||STATES:3||PHASE:3||COEXISTENCE:2||TRANSITION:2||TEMPERATURE:2||VORTICES:2||SINGLECRYSTALS:2||SILICON SURFACE:2||GROWTH:2||MAGNETISM:2||GALLIUM:1||Chemical vapor deposition:1||GAP:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||SCANNING TUNNELING SPECTROSCOPY:1||BANDSTRUCTURE:1||STRIPES:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||RECONSTRUCTIONS:1||FLUCTUATIONS:1||Surface conductivity:1||XPS:1||INSULATOR:1||DEVILS STAIRCASE:1||BONDS:1||DIRAC CONE:1||SYSTEM:1||METALINSULATORTRANSITION:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||GOLD:1||HETEROSTRUCTURES:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MAJORANA FERMIONS:1||MONOLAYER:1||WAVE BASISSET:1||LIQUIDS:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||CHAINS:1||SUPERCONDUCTOR:1||Surface electronic phenomena:1||BI(111) BILAYER:1||Diamond:1||FILMS:1||TOTALENERGY CALCULATIONS:1||ELECTRONICSTRUCTURE:1||SP(3):1||CHARGEDENSITY WAVES:1||
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