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YEOM, HAN WOONG (염한웅)
Dept of Physics(물리학과)
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PHASE:4||STATES:3||STATE:3||TRANSITION:2||SILICON SURFACE:2||SINGLECRYSTALS:2||VORTICES:2||TEMPERATURE:2||COEXISTENCE:2||CHARGEDENSITY WAVES:2||MAGNETISM:2||GROWTH:2||WAVE BASISSET:1||RECONSTRUCTIONS:1||Chemical vapor deposition:1||SP(3):1||SCANNING TUNNELING SPECTROSCOPY:1||Anisotropic lattices:1||ELECTRONICSTRUCTURE:1||TOTALENERGY CALCULATIONS:1||Diamond:1||FILMS:1||Firstprinciples calculation:1||Topological phase:1||BI(111) BILAYER:1||Surface electronic phenomena:1||GALLIUM:1||Electron spectroscopy:1||ELECTRONICPROPERTIES:1||SPECTRA:1||STRIPES:1||GAP:1||Bandgap materials:1||Gallium:1||Silicon:1||Angleresolved photoemission:1||MetalSemiconductor interface:1||RESOLVED PHOTOELECTRONSPECTROSCOPY:1||Surface conductivity:1||XPS:1||DEVILS STAIRCASE:1||BONDS:1||FLUCTUATIONS:1||Topological properties:1||DIRAC CONE:1||SYSTEM:1||(100) surface:1||CARBON FILMS:1||CRYSTAL:1||IRTE2:1||METALINSULATORTRANSITION:1||Electrondoping:1||GOLD:1||EXPERIMENTAL REALIZATION:1||SURFACE:1||MONOLAYER:1||Energy band diagram:1||Photoemission electron microscopy:1||PHOTOELECTRONSPECTROSCOPY:1||BANDSTRUCTURE:1||LIQUIDS:1||Energy gap:1||Semiconductor doping:1||Charge doping:1||Topological order:1||Topology:1||1TTAS2:1||HETEROSTRUCTURES:1||SUPERCONDUCTOR:1||MAJORANA FERMIONS:1||CHAINS:1||Calculations:1||Topological insulators:1||FERROMAGNETISM:1||INSULATOR:1||
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