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CHUNG, JIN WOOK (정진욱)

Dept of Physics(물리학과)

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ADSORPTION:19||STATES:16||PHOTOEMISSION:14||ELECTRONICSTRUCTURE:14||PHOTOELECTRONSPECTROSCOPY:10||GROWTH:9||SILICON:8||RECONSTRUCTION:8||SPECTROSCOPY:8||TRANSITION:8||ALKALIMETAL ADSORPTION:8||SI(111):8||SURFACE:7||SI(001) SURFACE:6||SI(100):6||MICROSCOPY:6||METALS:6||FILMS:6||ANGLERESOLVEDPHOTOEMISSION:6||ENERGY:6||RECONSTRUCTIONS:6||PHASETRANSITION:4||MO(001) SURFACE:4||SI(111) SURFACE:4||SI(100) SURFACES:4||LI:4||surface electronic phenomena:4||silicon:4||angle resolved photoemission:4||SI(001):4||organicsemiconductor interface:4||molecular orientation:4||adsorption:4||MODEL:4||electron energy loss spectroscopy:4||W(100):4||NA:4||CS:4||Si(100):4||alkali metals:4||SURFACES:4||DYNAMICS:4||PLASMON DISPERSION:4||EXISTENCE:4||SI(100)2X1 SURFACE:4||MO(100):4||PES:4||2X1:4||BEAMLINE:4||low energy electron diffraction (LEED):4||DIFFRACTION:4||TEMPERATURE:4||CHARGEDENSITYWAVE:4||GE(001):4||photoelectron spectroscopy:4||SEMICONDUCTOR SURFACES:4||NEXAFS:4||surface structure:4||DIFFUSION:3||SCANNINGTUNNELINGMICROSCOPY:3||TRACE FORMULA:2||insulating surfaces:2||SCANNING TUNNELING SPECTROSCOPY:2||KINETICS:2||SN:2||SI ADDIMERS:2||surface reconstruction:2||MAGNESIUM:2||SURFACESTATES:2||CORE LEVELS:2||DEFECTS:2||X1:2||MG:2||Xray scattering:2||diffraction:2||DERWAALS EPITAXY:2||FURAN:2||oxidation:2||SEMICONDUCTORS:2||DECOMPOSITION:2||ALKALIMETALS:2||phase transition:2||DOUBLELAYER:2||LOW INDEX SINGLE CRYSTAL SURFACES:2||GE(111):2||SCANNING TUNNELING MICROSCOPY:2||vibrational property:2||DOTS:2||Photoemission spectroscopy:2||Lowenergyelectrondiffraction:2||REM:2||AL:2||furan:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||R30DEGREES RECONSTRUCTION:2||CESIUM:2||oxygen:2||LAYERS:2||group 13 metals:2||PHASE:2||reconstruction:2||ANGLERESOLVED PHOTOEMISSION:2||ELECTRONICPROPERTIES:2||metalsemiconductor interfaces:2||SI(001) SURFACES:2||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:2||modification:2||LATTICE:2||STRAIN:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||THERMALDESORPTION:2||THIOPHENE:2||CYCLOADDITION:2||OXYGEN:2||AU/SI(111)(5X1):2||surfaces and interfaces:2||surface electron diffraction:2||METALLIZATION:2||001 SURFACE:2||GEOMETRY:2||SI(100) SURFACE:2||ANGLE RESOLVED PHOTOEMISSION:2||ALKALI METALS:2||Peierls instabilities:2||pyridine:2||ISLANDS:2||ASYMPTOTICS:2||ORGANICMOLECULES:2||silicon carbide:2||function, surface potential, surface states etc.):2||MOTTHUBBARD INSULATOR:2||germanium:2||scanning tunneling microscopy:2||thallium:2||lowenergy electron diffraction:2||LEED:2||INTERFACE:2||ELECTRON:2||ADSORBATES:2||POTASSIUM:2||SYSTEM:2||NANOCLUSTERS:2||X 7) SURFACE:2||CONJECTURE:2||electron energy loss spectroscopy (EELS):2||surface silicides:2||surface structure determination:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||INDUCED 5X2 RECONSTRUCTION:2||K/SI(100)2X1:2||SEMICONDUCTING SURFACES:2||SURFACE RELAXATION AND RECONSTRUCTION:2||LOW ENERGY ELECTRON DIFFRACTION (LEED):2||TOTALENERGY:2||1D electron system:2||SI(111)4X1IN SURFACE:2||functionalization:2||ELECTRONICS:2||QUANTUM DOTS:2||semiempirical models and model calculations:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||GROUNDSTATE:2||Xray photoelectron spectroscopy:2||STATE:2||semiconductors:2||density functional calculations.:2||ATOMICSTRUCTURE:2||WORK FUNCTION MEASUREMENTS:2||nanocluster:2||Valence band:2||WATER:2||XRAY DIFFRACTOMETER:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||surface electronic phenomena (work:2||RESOLVED INVERSE:2||SIC(0001):2||semiconducting surfaces:2||surface chemical reaction:2||SI(111)7X7 SURFACE:2||PROMOTED OXIDATION:2||faceting:2||CHEMISORPTION:2||Si(111):2||adsorption site:2||XRAY:2||SN/GE(111):2||ADATOMS:2||GAAS(110):2||EXCITATIONS:2||SURFACE ELECTRONIC PHENOMENA:2||AG:2||Metalinsulator transition:2||SI(111)7X7:2||CHAINS:2||ORIGIN:2||PYRROLE:2||MOLECULES:2||ALKALI:2||

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