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CHUNG, JIN WOOK (정진욱)

Dept of Physics(물리학과)

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ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali 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reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR 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SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali 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reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR 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SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission 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INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED 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tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali 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reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 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structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR 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SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN 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Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||ADSORPTION:10||ELECTRONICSTRUCTURE:9||STATES:8||PHOTOEMISSION:7||GROWTH:6||RECONSTRUCTION:5||PHOTOELECTRONSPECTROSCOPY:5||SI(111):5||METALS:5||SILICON:4||ENERGY:4||TRANSITION:4||ALKALIMETAL ADSORPTION:4||SURFACE:4||SPECTROSCOPY:4||SI(100):3||DIFFRACTION:3||RECONSTRUCTIONS:3||FILMS:3||MICROSCOPY:3||SURFACES:3||ANGLERESOLVEDPHOTOEMISSION:3||SI(001) SURFACE:3||MODEL:3||DYNAMICS:3||TRACE FORMULA:2||surface structure:2||2X1:2||PES:2||MG:2||DERWAALS EPITAXY:2||SI(100)2X1 SURFACE:2||DIFFUSION:2||MO(100):2||EXISTENCE:2||PLASMON DISPERSION:2||AL:2||RANDOMMATRIX THEORY:2||Bi2Se3 thin film:2||alkali metals:2||Si(100):2||LATTICE:2||SINGLE DIRAC CONE:2||BI2TE3:2||LIMIT:2||CS:2||NA:2||W(100):2||electron energy loss spectroscopy:2||adsorption:2||molecular orientation:2||organicsemiconductor interface:2||ASYMPTOTICS:2||SI(001):2||PHASETRANSITION:2||MO(001) SURFACE:2||X 7) SURFACE:2||CONJECTURE:2||SI(100) SURFACES:2||TRANSMISSION ELECTRONMICROSCOPY:2||EPITAXIAL COSI2 FILMS:2||SI(111) SURFACE:2||LI:2||surface electronic phenomena:2||QUANTUM DOTS:2||SPINWAVE INTERACTIONS:2||DETERMINANTS:2||CHAOS:2||surface states:2||SCANNINGTUNNELINGMICROSCOPY:2||SEMICONDUCTOR SURFACES:2||silicon:2||angle resolved photoemission:2||CHARGEDENSITYWAVE:2||GE(001):2||photoelectron spectroscopy:2||NEXAFS:2||APPROXIMATION:2||topological insulator (TI):2||graphene:2||interface:2||INSULATOR NANORIBBONS:2||TRANSPORT:2||TEMPERATURE:2||BEAMLINE:2||low energy electron diffraction (LEED):2||KINETICS:1||insulating surfaces:1||SCANNING TUNNELING SPECTROSCOPY:1||SN:1||SI ADDIMERS:1||surface reconstruction:1||MAGNESIUM:1||SURFACESTATES:1||CORE LEVELS:1||DEFECTS:1||X1:1||Xray scattering:1||diffraction:1||Density Functional Theory Method:1||TRANSMISSION ELECTRONDIFFRACTION:1||THALLIUM:1||FURAN:1||SCANNING TUNNELING MICROSCOPY:1||oxidation:1||SEMICONDUCTORS:1||DECOMPOSITION:1||ALKALIMETALS:1||phase transition:1||DOUBLELAYER:1||LOW INDEX SINGLE CRYSTAL SURFACES:1||GE(111):1||Photoemission spectroscopy:1||Lowenergyelectrondiffraction:1||REM:1||vibrational property:1||DOTS:1||furan:1||TOTALENERGY CALCULATIONS:1||CESIUM:1||oxygen:1||LAYERS:1||group 13 metals:1||R30DEGREES RECONSTRUCTION:1||PHASE:1||reconstruction:1||ANGLERESOLVED PHOTOEMISSION:1||metalsemiconductor interfaces:1||SI(001) SURFACES:1||SOFT XRAY PHOTOELECTRON SPECTROSCOPY:1||ELECTRONICPROPERTIES:1||modification:1||STRAIN:1||THERMALDESORPTION:1||THIOPHENE:1||CYCLOADDITION:1||ALKALI METALS:1||OXYGEN:1||surfaces and interfaces:1||surface electron diffraction:1||AU/SI(111)(5X1):1||001 SURFACE:1||METALLIZATION:1||GEOMETRY:1||SI(100) SURFACE:1||ANGLE RESOLVED PHOTOEMISSION:1||Peierls instabilities:1||pyridine:1||ISLANDS:1||ORGANICMOLECULES:1||INTERFACE:1||germanium:1||scanning tunneling microscopy:1||thallium:1||lowenergy electron diffraction:1||LEED:1||function, surface potential, surface states etc.):1||silicon carbide:1||MOTTHUBBARD INSULATOR:1||ELECTRON:1||ADSORBATES:1||POTASSIUM:1||SYSTEM:1||NANOCLUSTERS:1||NUCLEATION:1||LOW ENERGY ELECTRON DIFFRACTION (LEED):1||SURFACE RELAXATION AND RECONSTRUCTION:1||TOTALENERGY:1||surface silicides:1||surface structure determination:1||electron energy loss spectroscopy (EELS):1||INDUCED 5X2 RECONSTRUCTION:1||K/SI(100)2X1:1||SEMICONDUCTING SURFACES:1||1D electron system:1||SI(111)4X1IN SURFACE:1||functionalization:1||ELECTRONICS:1||semiempirical models and model calculations:1||Surface Magic Clusters:1||STATE:1||WORK FUNCTION MEASUREMENTS:1||Xray photoelectron spectroscopy:1||GROUNDSTATE:1||semiconductors:1||density functional calculations.:1||ATOMICSTRUCTURE:1||Valence band:1||WATER:1||nanocluster:1||XRAY DIFFRACTOMETER:1||Si(111)7 x 7:1||MAGIC CLUSTERS:1||GAAS(110):1||semiconducting surfaces:1||surface chemical reaction:1||SI(111)7X7 SURFACE:1||PROMOTED OXIDATION:1||faceting:1||CHEMISORPTION:1||Si(111):1||adsorption site:1||surface electronic phenomena (work:1||RESOLVED INVERSE:1||SIC(0001):1||XRAY:1||SN/GE(111):1||ADATOMS:1||EXCITATIONS:1||SURFACE ELECTRONIC PHENOMENA:1||AG:1||Metalinsulator transition:1||SI(111)7X7:1||CHAINS:1||ORIGIN:1||PYRROLE:1||MOLECULES:1||Simulations:1||Group III Metals:1||ALKALI:1||

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