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JEONG, YOON HA (정윤하)

Dept of Electrical Engineering(전자전기공학과)

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efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS:1||wideband code division multiple access:1||doherty amplifier efficiency:1||nanometer scale Tgate:1||multipletunnel junction:1||NANOCRYSTALLITES:1||TiO2 nanotube arrays:1||ANATASE:1||SULFUR PASSIVATION:1||PHOSPHORUSNITRIDE:1||GAAS MISEET:1||ELECTRON:1||driving amplifier:1||EXTRACTION:1||SiC MESFET:1||single electron transistor (SET):1||SPICE:1||SRAM:1||charge qubit:1||reflectance:1||PHOTOLUMINESCENCE:1||DEVICE:1||GaAs MESFET:1||CIRCUITS:1||DC:1||quantumwell Hall devices:1||NOR LOGIC DEVICES:1||in situ O2 plasma:1||highelectron mobility transistor (HEMT):1||CELLS:1||peaking cell:1||failure current:1||TIO2:1||Li ion intercalation:1||Chargetransfer:1||NATURAL GRAPHITE:1||BATTERIES:1||mHEMT:1||Metamorphic:1||Hot carrier:1||Reliability:1||mechanical stress:1||HIGHK:1||Dohertly amplifier:1||DEPOSITION:1||SIMULATION:1||lifetime:1||shallow trap level:1||power consumption:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||hot carrier (HC):1||phase:1||inverted Doherty power amplifier:1||ALINAS/GAINAS:1||lownoise amplifier:1||COULOMBBLOCKADE:1||Sideltadoping:1||HETEROSTRUCTURES:1||gateinduced drain leakage (GIDL):1||deembedding:1||classF power amplifier (PA):1||sweet spots:1||BASE STATIONS:1||passtransistor logic:1||SYSTEMS:1||NANOSTRUCTURES:1||Tgate:1||Composite right/lefthanded transmission line (CRLHTL):1||DOHERTY AMPLIFIER:1||Lanthanide Oxide (La2O3):1||Analog predistorter:1||FILM:1||lefthanded transmission line (DCRLHTL):1||long term evolution (LTE):1||neural network:1||dynamic response:1||Doherty power amplifier (PA):1||radio frequency (RF):1||PARAMETERS:1||Doherty aniplifier:1||double quantum dot (QD):1||GaAs/AlGaAs:1||inverted double channel structure:1||large gate voltage swing:1||TEMPERATURE:1||POWER DEVICE:1||classF:1||gate leakage:1||transmission line (TL):1||silicon (Si):1||metamorphic:1||zigzag Tgate:1||DIGITAL PREDISTORTION:1||spacechargelimited conduction (SCLC):1||ELECTRODE:1||Point defects:1||CUTOFF FREQUENCY:1||Device performance:1||HfLaON:1||stressinduced leakage current (SILC):1||highk dielectric:1||efficiency:18||linearity:14||Doherty amplifier:10||gallium nitride (GaN):8||DESIGN:7||PERFORMANCE:7||memory effects:7||power amplifier:7||power amplifier (PA):7||GaN HEMT:6||adjacent channel leakage ratio (ACLR):5||SONOS memory cell:4||HIGHEFFICIENCY:4||classE power amplifier:4||WCDMA APPLICATIONS:4||SURFACES:4||wideband code division multiple access (WCDMA):4||Doherty power amplifier:4||GATE:4||MOSFETS:3||SULFUR:3||harmonic:3||IMPACT:3||DEVICES:3||drain bias:3||POWERAMPLIFIERS:3||DIELECTRICS:3||power tracking:3||INTERFACE:3||FIELDEFFECT TRANSISTORS:3||harmonic termination:3||singleelectron transistor:3||predistorter (PD):3||WCDMA:3||electrostatic discharge (ESD):2||delay:2||RF:2||wideband code division multiple access (WCDMA):2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||Coulomb blockade:2||gallium nitride:2||QUALITY:2||internal transition:2||wideband codedivision multiple access (WCDMA):2||low frequency noise:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||positive bias temperature instability (PBTI):2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||LOWNOISE:2||PAE:2||radiofrequency (RF) measurement:2||PHOTOCVD:2||MOBILITY:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||THICKNESS:2||PMOSFETS:2||Analog predistorter (APD):2||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||envelope tracking (ET):2||GERMANIUM:2||RELIABILITY:2||ELECTRONMOBILITY TRANSISTOR:2||Degradation:2||digital predistortion:2||SUPERLATTICE STRUCTURES:2||Doherty power amplifier (DPA):2||Nanowire FET:2||switched biasing 1/f noise:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||ACTIVATION:2||LAYER:2||POWERAMPLIFIER:2||INALAS/INGAAS HEMTS:2||PREDISTORTION:2||LINEARIZATION:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||Si/SiGe channel:2||Adjacent channel leakage ratio (ACLR):2||MICROWAVE:2||intermodulation distortion (IMD):2||Ge outdiffusion:2||Si cap layer:2||SENSORS:2||analog predistorter:2||ELECTRODES:2||wideband:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||distributed amplifier:2||singleelectron transistor logic:2||series resistance:2||sweet spot:2||predistorter:2||Figure of merit (FOM):2||SiGe pMOSFET:2||quantum well:2||MODEL:2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||NBTI:2||LDMOSFET:2||CHANNEL:2||Extraction:1||PROTECTION:1||AlGaAs/InGaAs power HEMT:1||singleelectron tunneling:1||multigate singleelectron transistor:1||lowpressure metal organic chemical vapour deposition (LPMOCVD):1||RESOLUTION:1||GaNHEMT:1||capacitance extraction:1||Anisotropic conduction:1||contact resistance:1||organic thinfilm transistors (OTFTs):1||Electrostatic discharge (ESD):1||ENERGYCONVERSIONEFFICIENCY:1||THINFILMS:1||MICROSTRUCTURE:1||CO annealing:1||PARTICLESIZE:1||CAPACITY:1||GaAsbased HEMTs:1||predistortion:1||Contact etch stop layer (CESL):1||GAAS MIS INTERFACE:1||double composite right:1||Hammerstein:1||radiofrequency measurement:1||small signal:1||IC DESIGN:1||gate oxide breakdown:1||NEGATIVE DIFFERENTIAL RESISTANCE:1||optically detected resonance:1||DELTADOPED GAAS:1||high breakdown voltage:1||MOCVD:1||feedback circuit topology:1||DEPLETION MODE INP MISFET:1||NITRIDE:1||SURFACEEMITTING LASERS:1||OXIDE:1||intermodulation:1||FREQUENCY:1||twotone test:1||LINEARIZER:1||hybrid circuit:1||characteristic length:1||LARGEAREA:1||VOLTAGE:1||MATRIX:1||leakage current (I(leakage)):1||PHOTOELECTROCHEMICAL PROPERTIES:1||ELECTROCHEMICAL PROPERTIES:1||TITANIUM:1||distributed power amplifier (DPA):1||AES ANALYSIS:1||MOBILITY MODEL:1||nMOSFET:1||inverse classE power amplifier:1||highk dielectrics:1||upturns:1||HF:1||inverted Doherty PA:1||metalgate/highk dielectrics:1||classE power amplifier (PA):1||poweradded efficiency (PAE):1||JUNCTION ARRAY:1||FETS:1||minimum noise measure:1||ELECTRICAL CHARACTERISTICS:1||LINEARITY:1||metalgate/highk:1||hotcarrier reliability:1||plasmainduced damage (PID):1||ultrathin oxide:1||temperature:1||RF POWERAMPLIFIERS:1||phase measurement:1||spectrum:1||nanowire:1||DIOXIDE NANOWALL ARRAYS:1||ANODE MATERIAL:1||Maximum oscillation frequency:1||inverse classE power amplifier (PA):1||HfLaSiON:1||PBTI:1||strained device:1||metal gate/highk:1||LEAKAGE:1||HfO2:1||Capacitance measurement:1||modeling:1||STACKS:1||gallium nitride (GaN) high electron mobility transistor (HEMT):1||switchingmode amplifier:1||classE:1||error generator:1||COMPONENTS:1||AMPLIFIERS:1||organic thinfilm transistor (OTFT):1||static random access memory (SRAM):1||SINGLEELECTRON TRANSISTORS:1||STATES:1||GAAS/ALGAAS QUANTUMWELLS:1||LPMOCVD:1||BREAKDOWNVOLTAGE:1||TRANSISTOR:1||OPTOELECTRONIC INTEGRATEDCIRCUIT:1||PHOTOCHEMICAL VAPORDEPOSITION:1||intermodulation distortion:1||bias:1||memory effect:1||metamorphic high electron mobility transistor (mHEMT):1||FABRICATION:1||F(T):1||adaptive:1||variablerange hopping (VRH):1||onresistance (R(on)):1||Highk:1||BTI:1||timedependent dielectric breakdown (TDDB):1||DPD:1||trap cluster:1||TRANSFORMER:1||equivalent circuits:1||hafnium oxide:1||intermodulation (IM):1||failure analysis:1||nanowire fieldeffect transistor (NW FET):1||LOGIC:1||decoherence:1||GaAs/AsGaAs:1||INTERNAL TRANSITIONS:1||GAAS:1||high current density:1||SULFIDE TREATMENT:1||PASSIVATION:1||OXIDES:1||capacitancevoltage (C  V):1||MOS