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JEONG, YOON HA (정윤하)

Dept of Electrical Engineering(전자전기공학과)

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efficiency:36||linearity:28||Doherty amplifier:20||gallium nitride (GaN):16||DESIGN:14||memory effects:14||power amplifier:14||power amplifier (PA):14||GaN HEMT:12||adjacent channel leakage ratio (ACLR):10||PERFORMANCE:10||HIGHEFFICIENCY:8||classE power amplifier:8||WCDMA APPLICATIONS:8||wideband code division multiple access (WCDMA):8||Doherty power amplifier:8||SURFACES:8||WCDMA:6||harmonic:6||GATE:6||drain bias:6||POWERAMPLIFIERS:6||predistorter (PD):6||INTERFACE:6||harmonic termination:6||singleelectron transistor:6||SULFUR:6||power tracking:6||SONOS memory cell:4||Analog predistorter (APD):4||digital predistortion:4||Degradation:4||SUPERLATTICE STRUCTURES:4||Doherty power amplifier (DPA):4||POWERAMPLIFIER:4||INALAS/INGAAS HEMTS:4||PREDISTORTION:4||LINEARIZATION:4||Adjacent channel leakage ratio (ACLR):4||MICROWAVE:4||SENSORS:4||intermodulation distortion (IMD):4||analog predistorter:4||ELECTRODES:4||wideband:4||distributed amplifier:4||quantum well:4||singleelectron transistor logic:4||series resistance:4||sweet spot:4||MODEL:4||predistorter:4||DIELECTRICS:4||electrostatic discharge (ESD):4||LDMOSFET:4||RF:4||wideband code division multiple access (WCDMA):4||FIELDEFFECT TRANSISTORS:4||delay:4||internal transition:4||Coulomb blockade:4||wideband codedivision multiple access (WCDMA):4||gallium nitride:4||positive bias temperature instability (PBTI):4||PHOTOCVD:4||PAE:4||MOBILITY:4||envelope tracking (ET):4||MOSFETS:3||DEVICES:3||IMPACT:3||INJECTION:2||MEMORY CELLS:2||BioFETs:2||Biosensors:2||GERMANIUM:2||RELIABILITY:2||AlGaAs/InGaAs power HEMT:2||singleelectron tunneling:2||multigate singleelectron transistor:2||lowpressure metal organic chemical vapour deposition (LPMOCVD):2||RESOLUTION:2||ELECTRONMOBILITY TRANSISTOR:2||Extraction:2||GaNHEMT:2||capacitance extraction:2||PROTECTION:2||organic thinfilm transistors (OTFTs):2||Anisotropic conduction:2||contact resistance:2||ENERGYCONVERSIONEFFICIENCY:2||THINFILMS:2||MICROSTRUCTURE:2||Electrostatic discharge (ESD):2||CO annealing:2||PARTICLESIZE:2||CAPACITY:2||Nanowire FET:2||switched biasing 1/f noise:2||GaAsbased HEMTs:2||predistortion:2||Contact etch stop layer (CESL):2||GAAS MIS INTERFACE:2||forward and reverse reading:2||spatial and temporal evolution of trapped charge:2||profile of hole trapping:2||effects of trapped holes:2||shortchannel effects (SCEs):2||double composite right:2||ACTIVATION:2||LAYER:2||Hammerstein:2||NEGATIVE DIFFERENTIAL RESISTANCE:2||high breakdown voltage:2||DELTADOPED GAAS:2||MOCVD:2||feedback circuit topology:2||optically detected resonance:2||SURFACEEMITTING LASERS:2||DEPLETION MODE INP MISFET:2||NITRIDE:2||small signal:2||IC DESIGN:2||OXIDE:2||intermodulation:2||FREQUENCY:2||twotone test:2||LINEARIZER:2||hybrid circuit:2||gate oxide breakdown:2||characteristic length:2||LARGEAREA:2||VOLTAGE:2||MATRIX:2||PHOTOELECTROCHEMICAL PROPERTIES:2||leakage current (I(leakage)):2||ELECTROCHEMICAL PROPERTIES:2||TITANIUM:2||distributed power amplifier (DPA):2||AES ANALYSIS:2||ERASE:2||LABELFREE:2||BIOSENSORS:2||s equation:2||inverse classE power amplifier:2||Si/SiGe channel:2||nMOSFET:2||inverted Doherty PA:2||JUNCTION ARRAY:2||FETS:2||minimum noise measure:2||ELECTRICAL CHARACTERISTICS:2||LINEARITY:2||metalgate/highk:2||hotcarrier reliability:2||plasmainduced damage (PID):2||metalgate/highk dielectrics:2||ultrathin oxide:2||poweradded efficiency (PAE):2||classE power amplifier (PA):2||temperature:2||RF POWERAMPLIFIERS:2||phase measurement:2||spectrum:2||Si cap layer:2||Ge outdiffusion:2||nanowire:2||DIOXIDE NANOWALL ARRAYS:2||ANODE MATERIAL:2||Maximum oscillation frequency:2||inverse classE power amplifier (PA):2||strained device:2||metal gate/highk:2||HfLaSiON:2||PBTI:2||EFFECT SENSORS:2||1/F NOISE:2||ARRAYS:2||3D Poisson&apos:2||POISSONSEQUATION:2||In2Se3 nanowire:2||Low frequency noise:2||Preamorphization:2||HfO2:2||organic thinfilm transistor (OTFT):2||STATES:2||static random access memory (SRAM):2||SINGLEELECTRON TRANSISTORS:2||LPMOCVD:2||BREAKDOWNVOLTAGE:2||GAAS/ALGAAS QUANTUMWELLS:2||OPTOELECTRONIC INTEGRATEDCIRCUIT:2||TRANSISTOR:2||PHOTOCHEMICAL VAPORDEPOSITION:2||modeling:2||intermodulation distortion:2||bias:2||STACKS:2||gallium nitride (GaN) high electron mobility transistor (HEMT):2||switchingmode amplifier:2||memory effect:2||classE:2||metamorphic high electron mobility transistor (mHEMT):2||FABRICATION:2||F(T):2||error generator:2||COMPONENTS:2||adaptive:2||Figure of merit (FOM):2||SiGe pMOSFET:2||variablerange hopping (VRH):2||onresistance (R(on)):2||AMPLIFIERS:2||Highk:2||BTI:2||timedependent dielectric breakdown (TDDB):2||hot hole injection erase:2||cell scaling limit:2||CARBON NANOTUBE:2||tapered fin:2||trigate FinFET:2||DPD:2||NBTI:2||TRANSFORMER:2||trap cluster:2||decoherence:2||LOGIC:2||high current density:2||GaAs/AsGaAs:2||INTERNAL TRANSITIONS:2||GAAS:2||CHANNEL:2||SULFIDE TREATMENT:2||PASSIVATION:2||OXIDES:2||capacitancevoltage (C  V):2||MOS:2||wideband code division multiple access:2||doherty amplifier efficiency:2||nanometer scale Tgate:2||intermodulation (IM):2||multipletunnel junction:2||failure analysis:2||nanowire fieldeffect transistor (NW FET):2||NANOCRYSTALLITES:2||TiO2 nanotube arrays:2||ANATASE:2||SULFUR PASSIVATION:2||PHOSPHORUSNITRIDE:2||GAAS MISEET:2||Silicon Nanowire:2||ISFETs:2||INTERFACES:2||DNA:2||nonCartesian mesh:2||Phase change memory:2||HCl:2||driving amplifier:2||charge qubit:2||single electron transistor (SET):2||SPICE:2||SRAM:2||GaAs MESFET:2||reflectance:2||PHOTOLUMINESCENCE:2||DEVICE:2||CIRCUITS:2||DC:2||quantumwell Hall devices:2||NOR LOGIC DEVICES:2||in situ O2 plasma:2||SiC MESFET:2||highelectron mobility transistor (HEMT):2||CELLS:2||QUALITY:2||peaking cell:2||TIO2:2||failure current:2||Li ion intercalation:2||Chargetransfer:2||NATURAL GRAPHITE:2||BATTERIES:2||low frequency noise:2||mHEMT:2||Metamorphic:2||mechanical stress:2||Hot carrier:2||Reliability:2||HIGHK:2||Dohertly amplifier:2||DEPOSITION:2||effects of localized electron trapping:2||DRAIN:2||Electrical Characteristics:2||scaling length:2||DEPLETED SOI MOSFETS:2||Chalcogenide:2||SiO2 passivation:2||Boron diffusion:2||lifetime:2||inverted Doherty power amplifier:2||ALINAS/GAINAS:2||lownoise amplifier:2||power consumption:2||COULOMBBLOCKADE:2||Sideltadoping:2||HETEROSTRUCTURES:2||LOWNOISE:2||metal oxide semiconductor fieldeffect transistor (MOSFET):2||gateinduced drain leakage (GIDL):2||hot carrier (HC):2||deembedding:2||classF power amplifier (PA):2||SYSTEMS:2||phase:2||sweet spots:2||BASE STATIONS:2||passtransistor logic:2||radiofrequency (RF) measurement:2||NANOSTRUCTURES:2||Tgate:2||Composite right/lefthanded transmission line (CRLHTL):2||DOHERTY AMPLIFIER:2||Lanthanide Oxide (La2O3):2||Analog predistorter:2||FILM:2||REFERENCE ELECTRODES:2||BIOMARKER DETECTION:2||lefthanded transmission line (DCRLHTL):2||THICKNESS:2||PMOSFETS:2||long term evolution (LTE):2||neural network:2||Doherty power amplifier (PA):2||double quantum dot (QD):2||inverted double channel structure:2||large gate voltage swing:2||GaAs/AlGaAs:2||TEMPERATURE:2||POWER DEVICE:2||radio frequency (RF):2||PARAMETERS:2||classF:2||gate leakage:2||Doherty aniplifier:2||transmission line (TL):2||silicon (Si):2||metamorphic:2||zigzag Tgate:2||DIGITAL PREDISTORTION:2||spacechargelimited conduction (SCLC):2||ELECTRODE:2||Point defects:2||CUTOFF FREQUENCY:2||Device performance:2||HfLaON:2||stressinduced leakage current (SILC):2||highk dielectric:2||

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