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JO, MOON HO(조문호)

Department: Dept of Materials Science & Enginrg(신소재공학과)

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SILICON NANOWIRES:6||FIELDEFFECT TRANSISTORS:5||HETEROSTRUCTURES:5||GERMANIUM:5||SILICON:5||RESONANCE:4||MECHANISM:4||SURFACE:4||TRANSPORT:4||ELECTRONICS:3||SINGLE:3||TRANSISTORS:3||ARRAYS:3||Nanowire:3||LIQUIDSOLID GROWTH:3||SEMICONDUCTOR NANOWIRES:3||SURFACESTATES:3||QUANTUM DOTS:2||GROWTH:2||PHOTOLUMINESCENCE:2||DNA:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||NANOSENSORS:2||NANOTUBES:2||CR:2||oxide photonics:2||SUPERLATTICES:2||1/F NOISE:2||COMPOSITES:2||SRTIO3:2||Silicon:2||DIRAC FERMIONS:2||CATALYST:2||nanowire:2||ELECTRODES:2||NANOCOMPOSITE:2||FILMS:2||PERFORMANCE:2||OXIDE:2||GRAPHENE:2||LUMINESCENCE:2||SI NANOWIRES:2||PHOTODETECTORS:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||Aptamer sensors:1||RECEPTORS:1||NICKEL NANOCRYSTALS:1||LAYER GRAPHENE:1||ferroelectrics:1||CARRIER LIFETIME:1||RESISTANCE:1||MONO LAYER:1||HELICITY:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||singlecrystal silicon:1||quantum confinement:1||GRAPHENE FILMS:1||SEMICONDUCTORS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||CURIETEMPERATURE FERROMAGNETISM:1||GE:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||INAS NANOWIRES:1||METAL CONTACTS:1||EMISSION:1||FILTERS:1||DYNAMICS:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||DEVICES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||INTERNAL GAIN:1||GE NANOWIRES:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Si nanowire fieldeffect transistor:1||BIOSENSORS:1||LITHOGRAPHY:1||RIBBONS:1||BLENDE GAAS NANOWIRES:1||ZINC BLENDE:1||ELLIPSOMETER:1||REFLECTOR:1||VALLEY POLARIZATION:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||Ge nanowires:1||ELECTRICFIELD:1||field effect transistor detector:1||ROOMTEMPERATURE:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||nanostructures:1||selfassembly:1||SOLARCELLS:1||CONDUCTION:1||OPTICALPROPERTIES:1||SPECTROSCOPY:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||Vascular endotherial growth factor:1||bandgap modulation:1||IIIV NANOWIRES:1||INDIUMPHOSPHIDE NANOWIRES:1||PHONONS:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||mutiferroics:1||photodetectors:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||FERROMAGNETIC NANOPARTICLES:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||MOLECULAR RECOGNITION ELEMENTS:1||BREASTCANCER:1||LIQUIDSOLID MECHANISM:1||TERAHERTZ:1||GLANCING ANGLE DEPOSITION:1||BILAYER:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||multiferroics:1||photovoltaics:1||stacking faults:1||IIIV semiconductor:1||STATE:1||MOS2:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||RNA aptamer:1||Twin defects:1||INSULATOR:1||

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