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JO, MOON HO (조문호)

Dept of Materials Science & Engineering(신소재공학과)

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SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2||MOS2:2||photovoltaics:2||multiferroics:2||NANOCRYSTALS:2||SINGLECRYSTALS:2||Energy gap:2||NANOTUBES:2||CR:2||RNA aptamer:2||HELICITY:2||GeNWJL:1||Nanostructure:1||Nanoconifer:1||THINFILMS:1||BULK:1||photodetector:1||solutionprocessed carbon nanotube film:1||PHOTODETECTION:1||NANOSHEETS:1||NEGATIVE MAGNETORESISTANCE:1||FIELDEMISSION:1||HIGHSPIN MOLECULES:1||RESISTANCE:1||Gold compounds:1||Persistent Photoconductivity:1||Photocurrent measurement:1||VALLEY COHERENCE:1||MOSE2:1||Electric insulators:1||Ultrafast:1||INJECTION:1||FUTURE:1||Thermal evaporation:1||ELECTROLYTES:1||ferroelectric photovoltaics:1||FRANZKELDYSH:1||quantum confinement:1||singlecrystal silicon:1||GRAPHENE FILMS:1||SILICIDE NANOWIRES:1||COSI NANOWIRES:1||ELECTRONIC STATES:1||THINFILM TRANSISTORS:1||interfaces:1||GE:1||CURIETEMPERATURE FERROMAGNETISM:1||Matrix metalloproteinase9 (MMP9):1||MODULATION:1||METAL CONTACTS:1||Schottky barrier diodes:1||Photocatalytic efficiency:1||MONOLAYER WSE2:1||Molybdenum compounds:1||Narrow band gap semiconductors:1||Hot carrier injection:1||Twodimensional materials:1||Ar plasma treatment:1||LAYERS:1||Silicon oxide:1||Li rechargeable battery:1||RECHARGEABLE LITHIUM BATTERIES:1||FranzKeldysh effect:1||ABSORPTION EDGE:1||magnetoresistance:1||exchange interaction:1||ELECTRONICBAND:1||GE NANOWIRES:1||INTERNAL GAIN:1||POLYMER:1||Ge semiconductor:1||kinetic control:1||vaporliquidsolid growth:1||GAS:1||Gate effect:1||TUMOR INVASION:1||CARBON NANOTUBES:1||Metal functionalization:1||Photogenerated carriers:1||Visible light absorption:1||Infrared devices:1||photogating effect:1||TUNNEL BARRIERS:1||MOSFETs:1||GeO2:1||suboxide:1||ENERGYLOSS SPECTROSCOPY:1||THERMALDESORPTION:1||Anode:1||NANOWIRES:1||Electrooptical modulation:1||ELECTRICFIELD:1||Ge nanowires:1||field effect transistor detector:1||SPIN TRANSPORT:1||SILICIDES:1||MAGNETIZATION RELAXATION:1||Magnetic properties and measurements:1||TEMPERATURE FERROMAGNETISM:1||selfassembly:1||nanostructures:1||SOLARCELLS:1||HEAVYHOLE EXCITONS:1||Broadband absorption:1||Photo detection:1||Charge transfer:1||Monolayers:1||Photovoltaics:1||Transition metal dichalcogenides:1||SUBSTRATE:1||Vectorial growth:1||photoconductive gain:1||Near IR detection:1||transparent transistor:1||impurity band conduction:1||METALLIC IMPURITY CONDUCTION:1||SIZE:1||CRYSTAL:1||PRECIPITATION:1||photoconductor:1||ELECTRON:1||BAND:1||MATRIX METALLOPROTEINASES:1||METALLIC NANOWIRES:1||PHONONS:1||Metals:1||High temperature engineering:1||CHARGE:1||germanide contact:1||ELECTROCHEMICAL DEGRADATION:1||photodetectors:1||mutiferroics:1||ATOMICSCALE:1||Schottky barriers:1||flexible electronics:1||phosphorus:1||SCANNING PHOTOCURRENT MICROSCOPY:1||GROWTH:1||FERROMAGNETIC NANOPARTICLES:1||PHOTOLUMINESCENCE:1||Deposition process:1||Sputtering:1||internal gain:1||CRYSTAL GROWTH:1||SHAPE:1||MAGNETICPROPERTIES:1||TERAHERTZ:1||Precious metals:1||Internal photoemission:1||Photocatalytic performance:1||LIGHTHOLE:1||Titanium compounds:1||FEWLAYER RES2:1||Broadband detection:1||Optoelectronic applications:1||Roomtemperature operation:1||NANOSTRUCTURES:1||Group IV photonics:1||networked single wall carbon nanotubes:1||SPECTRAL RESPONSE:1||Twodimensional material:1||NTYPE SILICON:1||SPINTRONICS:1||NANOTUBE:1||INTRINSIC OPTICAL ABSORPTION:1||Semiconductors:1||FERROMAGNETIC SEMICONDUCTOR:1||Field effect transistor (FET):1||Streptavidinbiotin binding:1||GOLD ELECTRODE:1||STATE:1||Metal nanoparticles:1||TRANSITIONMETAL DICHALCOGENIDES:1||Graphene:1||ACCUMULATION:1||CHALLENGES:1||CRYSTALGROWTH:1||COMPOSITE:1||TRANSITION:1||OPTICAL MODULATORS:1||WAVEGUIDE:1||DEPENDENCE:1||graphene:1||TEMPERATURE:1||FESI NANOWIRES:1||ALLOYS:1||METASTASIS:1||PROPAGATION:1||INSULATOR:1||Light:1||Platinum:1||Titanium dioxide:1||Photons:1||Interface engineering:1||Topological insulators:1||Photodetectors:1||Transition metals:1||PRECESSION:1||SILICON NANOWIRES:7||HETEROSTRUCTURES:7||FIELDEFFECT TRANSISTORS:6||GERMANIUM:5||SILICON:5||TRANSPORT:5||SURFACE:5||MECHANISM:5||SINGLE:4||SEMICONDUCTOR NANOWIRES:4||RESONANCE:4||PHOTODETECTORS:3||SI NANOWIRES:3||SURFACESTATES:3||DYNAMICS:3||LIQUIDSOLID GROWTH:3||OXIDE:3||PERFORMANCE:3||FILMS:3||DIRAC FERMIONS:3||TRANSISTORS:3||Nanowire:3||CATALYST:3||ARRAYS:3||SRTIO3:3||oxide photonics:3||ELECTRONICS:3||DNA:3||NANOSENSORS:3||GRAPHENE:3||MONO LAYER:2||Light absorption:2||LUMINESCENCE:2||ferroelectrics:2||LAYER GRAPHENE:2||NICKEL NANOCRYSTALS:2||Aptamer sensors:2||RECEPTORS:2||SEMICONDUCTORS:2||VALLEY POLARIZATION:2||NANOCOMPOSITE:2||DEVICES:2||ELECTRODES:2||nanowire:2||LITHOGRAPHY:2||RIBBONS:2||Si nanowire fieldeffect transistor:2||BIOSENSORS:2||Electromagnetic wave absorption:2||SUPERLATTICES:2||Silicon:2||COMPOSITES:2||CONDUCTION:2||ROOMTEMPERATURE:2||1/F NOISE:2||SPECTROSCOPY:2||Heterojunctions:2||Hot carriers:2||Vascular endotherial growth factor:2||QUANTUM DOTS:2||LIQUIDSOLID MECHANISM:2||MOLECULAR RECOGNITION ELEMENTS:2||BREASTCANCER:2