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KIM, HYUNGJUN (김형준)

Dept of Materials Science & Engineering(신소재공학과)

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atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||atomic layer deposition:9||SURFACES:6||THINFILMS:6||Ru:4||Photocatalyst:4||FILMS:4||TiO2:4||GLASS:4||Atomic layer deposition:3||OXIDE THINFILMS:3||CHEMICALVAPORDEPOSITION:3||interface states:2||oxidation:2||COATINGS:2||hen eggshell:2||hafnium compounds:2||dielectric materials:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ARRAYS:2||conduction bands:2||SPECTROSCOPY:2||SUBSTRATE:2||CVD:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||DIELECTRICS:2||Plasma enhanced atomic layer deposition:2||OXIDES:2||RU:2||ANORGANIC BOVINE BONE:2||GROWTH:2||PHOTOLYSIS:2||Xray photoelectron spectra:2||INVIVO:2||MEMORIES:2||NANOSTRUCTURES:2||WATER:2||leakage currents:2||NEXAFS:2||THICKNESS:2||RuCp2:2||ELECTRODE:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||TECHNOLOGY:2||BACTERIA:2||TITANIUMDIOXIDE:2||XENOGRAFT BIOOSS:2||TA:2||PLASMAENHANCED ALD:2||plasma materials processing:2||SI:2||METAL:2||histomorphometry:2||osteoconductivity:2||ALD:2||Photoelectron spectroscopy:1||laser epitaxy:1||RUTHENIUM THINFILMS:1||CV measurements:1||HIGHDENSITY:1||Oxides:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||NANOLITHOGRAPHY:1||TRANSPARENT CONDUCTING OXIDES:1||PHOTOEMISSIONSPECTROSCOPY:1||SILICON:1||SR)TIO3 CAPACITORS:1||OXIDE:1||Crystal structure:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||NANOPARTICLES:1||transparent TFT:1||resistive RAM:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||Xray diffraction:1||ELECTRODES:1||LITHOGRAPHY:1||nucleation:1||NONVOLATILE MEMORY:1||Xray diffration:1||NACO2O4:1||tantalum oxide:1||interfacial layer:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||Neural network acceleration:1||Organic thin film transistors:1||SUPERPARAMAGNETISM:1||OXYGEN:1||resistive switching:1||SRTIO3:1||FABRICATION:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||transparent conducting oxides:1||rf sputtering:1||ROOMTEMPERATURE:1||ANODES:1||DIELECTRICCONSTANT:1||anodizing aluminum oxide:1||SWITCH:1||MOLECULARBEAM EPITAXY:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||SIZE:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||TEMPLATE:1||roughness:1||RUELECTRODES:1||Laser epitaxy:1||SURFACE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||ELECTRICALPROPERTIES:1||EPITAXY:1||BOTTOM ELECTRODE:1||SIO2:1||(BA:1||NiO:1||ANODIZATION:1||SINGLECRYSTALS:1||Xray photoelectron spectroscopy:1||INTERCONNECTS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||LANTHANUM:1||PULSEDLASER DEPOSITION:1||ZINCOXIDE:1||ORIENTATION:1||INDIUMTINOXIDE:1||oxides:1||NANOTUBES:1||VAPORDEPOSITION:1||TA2O5:1||nanocapacitor:1||graphene:1||highresolution transmission electron microscopy:1||HFO2:1||AFM tip:1||electric field:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||

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