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KIM, HYUNGJUN (김형준)
Dept of Materials Science & Engineering(신소재공학과)
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atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||RuO2:1||MECHANISM:1||Neural network acceleration:1||Organic thin film transistors:1||resistive switching:1||SRTIO3:1||SUPERPARAMAGNETISM:1||OXYGEN:1||leakage current:1||dielectricreliability:1||interface state:1||DIFFUSION BARRIER PROPERTIES:1||CU METALLIZATION:1||TAN:1||RUTHENIUM:1||COVALENT BINDING:1||magnetic materials:1||transparent conducting oxides:1||rf sputtering:1||SILICONGERMANIUM:1||ANODES:1||MOLECULARBEAM EPITAXY:1||anodizing aluminum oxide:1||SWITCH:1||SIZE:1||DIELECTRICCONSTANT:1||FORCE MICROSCOPY:1||in situ nitridation:1||Cu interconnect technology:1||SUBSTRATETEMPERATURE:1||ANTIBODIES:1||Nanotechnology:1||Nanofabrication:1||FIELDEFFECT TRANSISTORS:1||liquid phase epitaxy:1||PARTICLES:1||RUO2:1||Aldoped ZnO films:1||Metal oxide:1||ferromagnetic materials:1||roughness:1||RUELECTRODES:1||TEMPLATE:1||NONVOLATILE STORAGE DEVICES:1||NITROGEN:1||Aldoped zinc oxide:1||Thin film transistors:1||DEPOSITION:1||COBALT:1||Laser epitaxy:1||ELECTRICALPROPERTIES:1||EPITAXY:1||HETEROSTRUCTURES:1||Xray photoelectron spectroscopy:1||NiO:1||ANODIZATION:1||LANTHANUM:1||BOTTOM ELECTRODE:1||SIO2:1||KINETICS:1||SI(100):1||Photoelectron spectroscopy:1||HIGHDENSITY:1||NANOLITHOGRAPHY:1||laser epitaxy:1||CV measurements:1||RUTHENIUM THINFILMS:1||ferroelectric domain:1||RELIABILITY:1||nanoscale devices:1||DNA MICROARRAYS:1||BIOTIN:1||SENSITIZED SOLARCELLS:1||Gate oxide:1||ATOMICLAYER DEPOSITION:1||INP:1||MN:1||Oxides:1||Effects of oxygen exposure:1||TRANSPARENT CONDUCTING OXIDES:1||CHLORINE:1||PHOTOEMISSIONSPECTROSCOPY:1||OXIDE:1||NANOPARTICLES:1||SR)TIO3 CAPACITORS:1||SILICON:1||DOMAINS:1||nitrogenoxygen mixture plasma:1||GATE DIELECTRICS:1||TANTALUM NITRIDE FILMS:1||COPPER:1||UV/VIS spectroscopy:1||LAYER:1||ANTIGEN:1||Nanotemplate:1||Interface roughness:1||HfO(2):1||cobalt:1||Crystal structure:1||Growth characteristics:1||Effects of growth temperature:1||transparent TFT:1||resistive RAM:1||Si1xGex film:1||Selective epitaxial growth:1||SIGE:1||Contact resistance:1||LIGHTEMITTINGDIODES:1||TRANSISTORS:1||DEVICES:1||tantalum oxide:1||interfacial layer:1||NONVOLATILE MEMORY:1||Xray diffraction:1||nucleation:1||LITHOGRAPHY:1||ELECTRODES:1||Radiofrequency magnetron sputtering:1||PRESSURE:1||Selfassembly:1||NITRIDE INVERSE OPALS:1||OXIDE NANOTUBE ARRAYS:1||CARBON NANOTUBES:1||atomic layer deposition:10||THINFILMS:6||CHEMICALVAPORDEPOSITION:6||SURFACES:6||FILMS:5||Ru:5||GLASS:4||Photocatalyst:4||Atomic layer deposition:4||TiO2:4||GROWTH:3||NANOSTRUCTURES:3||METAL:3||OXIDE THINFILMS:3||ELECTRODE:3||TA:3||SI:2||plasma materials processing:2||osteoconductivity:2||histomorphometry:2||PLASMAENHANCED ALD:2||TECHNOLOGY:2||interface states:2||oxidation:2||XENOGRAFT BIOOSS:2||TITANIUMDIOXIDE:2||BACTERIA:2||COATINGS:2||dielectric materials:2||hafnium compounds:2||hen eggshell:2||FABRICATION:2||ARRAYS:2||SPECTROSCOPY:2||oxygen exposure:2||hydrothermal treatment:2||MAXILLARY SINUS AUGMENTATION:2||CRITICALSIZE DEFECTS:2||HYDROXYAPATITE CERAMICS:2||OCTACALCIUM PHOSPHATE:2||ROOMTEMPERATURE:2||ALD:2||SUBSTRATE:2||CVD:2||ADSORPTION:2||DIELECTRICS:2||OXIDES:2||bone substitute:2||HUMAN EXTRACTION SOCKETS:2||CALCIUMCARBONATE:2||Plasma enhanced atomic layer deposition:2||SURFACE:2||Xray photoelectron spectra:2||RU:2||ANORGANIC BOVINE BONE:2||PHOTOLYSIS:2||MEMORIES:2||leakage currents:2||NEXAFS:2||INVIVO:2||ZINCOXIDE:2||WATER:2||THICKNESS:2||conduction bands:2||RuCp2:2||CAPACITOR:2||GUIDED TISSUE REGENERATION:2||Selfcleaning effect:2||Polymer substrate:2||(BA:1||INTERCONNECTS:1||Hall effect measurements:1||IMMUNOASSAYS:1||Nanodevice:1||PHOTONIC CRYSTALS:1||NANOWIRE ARRAYS:1||IIIV SEMICONDUCTORS:1||InMnP:Zn:1||diluted magnetic semiconductor:1||SINGLECRYSTALS:1||Phase control:1||PULSEDLASER DEPOSITION:1||ORIENTATION:1||Cl2 exposure:1||TEMPERATURE:1||DEPENDENCE:1||INDIUMTINOXIDE:1||highresolution transmission electron microscopy:1||HFO2:1||nanocapacitor:1||graphene:1||oxides:1||VAPORDEPOSITION:1||TA2O5:1||NANOTUBES:1||electric field:1||AFM tip:1||TFTS:1||LINKEDIMMUNOSORBENTASSAY:1||SOLIDPHASE:1||ELISA:1||SELFASSEMBLED MONOLAYERS:1||KAPPA GATE DIELECTRICS:1||SEQUENTIAL SURFACEREACTIONS:1||Metal gate:1||CAPACITANCE:1||CMOS:1||nanorods:1||nickel:1||Films properties:1||AL FILMS:1||ZnO:1||RAY PHOTOELECTRONSPECTROSCOPY:1||TRANSPARENT:1||IV nonlinearity:1||SENSORS:1||WIRES:1||TEMPERATUREDEPENDENCE:1||Xray diffration:1||NACO2O4:1||R
