Open Access System for Information Sharing
All
Title
Author
Subject
Login
Library
Help
검색
HOME
Communities & Collections
Researchers
Title
Browse by Researchers
LEE, JONG LAM (이종람)
Dept of Materials Science & Engineering(신소재공학과)
Field(s)
E-Mail
Homepage
Loading...
Export
Journal Papers
(International)
Journal Papers
(Domestic)
Conference Papers
(International)
Conference Papers
(Domestic)
Journal Papers(International)
Journal Papers(Domestic)
Conference Papers(International)
Conference Papers(Domestic)
30 items
100 items
200 items
Show more items...
H-INDEX
Chart.
Keyword
LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||HOLE INJECTION LAYER:2||OXYGEN:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||NUCLEATION:2||SiC:2||Xray photoemission spectroscopy:2||Pd:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||(NH4)(2)Sx treatment:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||QUANTUM EFFICIENCY:2||Organic photovoltaic cells:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||(Ga,Mn)N:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||UVvis absorption:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||VOLATILE ORGANICCOMPOUNDS:1||POLYMER PHOTOVOLTAIC CELLS:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||isoelectronic doping:1||PLATINUM:1||high Al mole fraction:1||ALGAN/GAN HEMTS:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ferromagnetic semiconductor:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||Photoluminescence:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||metaloxides:1||nanowire:1||junctions array:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||GAAS POWER MESFET:1||MICROWAVE:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||PHASE:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||Phosphor:1||ABSORPTION:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||SELFORGANIZATION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||ELECTRON INJECTION LAYER:1||ICP:1||STATES:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||GAASMESFETS:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Pd/Ge/Ti/Au:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||SPECTRUM:1||ANODES:1||reflective ohmic contact:1||electronic nose (Enose):1||SILICON NANOWIRE:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||outcoupling efficiency:1||light extraction:1||HIGHREFLECTANCE:1||RIE:1||Schottky contact:1||SULFUR PASSIVATION:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||SRPES:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||OXYGENPLASMA:1||AU2O3:1||interfacial property:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||NI/AU CONTACT:1||GaAs MESFET:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||(GA,MN)N:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||super density are plasma ion plating:1||organic light emitting diode:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||DIFFUSION:4||OXIDATION:4||PTYPE GAN:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||SOLARCELLS:4||ROOMTEMPERATURE:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||SILICONCARBIDE:3||MESFET:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||MECHANISM:3||indium tin oxide:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||band bending:3||GAAS:3||O2 plasma treatment:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||Xray photoelectron spectroscopy:3||synchrotron radiation photoemission spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||GRAPHITE:2||PENTACENE:2||CLUSTERS:2||SCHOTTKY CONTACT:2||NGAAS:2||MAGNETORESISTANCE:2||DEVICE:2||aqua regia treatment:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||PHEMT:2||RESISTIVITY:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||THERMALSTABILITY:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||xray scattering:2||Pd ohmic contact:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||sulfidation:2||PdGe:2||DECOMPOSITION:2||HYDROGEN:2||CIRCULARDICHROISM:2||work function:2||DYNAMICS:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CHEMICALVAPORDEPOSITION:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEM
