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LEE, JONG LAM (이종람)

Dept of Materials Science & Engineering(신소재공학과)

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LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE:2||DENSITY:2||DECOMPOSITION:2||work function:2||DYNAMICS:2||PdGe:2||HYDROGEN:2||CIRCULARDICHROISM:2||Ti/Al/SiC:2||CO2 REDUCTION:2||ELECTROREDUCTION:2||DEGRADATION MECHANISMS:2||CARBON NANOTUBES:2||ELECTRONIC NOSE:2||CHEMICALVAPORDEPOSITION:2||AlGaN:2||penetration depth:2||MIS:2||photoemission spectroscopy:2||light emission:2||SINGLEPHOTON SOURCES:2||aluminum:2||LIGHTEMITTING DEVICES:2||NANOWIRES:2||OXYGEN:2||HOLE INJECTION LAYER:2||NTYPE GAAS:2||pSiC:2||barium:2||OPENCIRCUIT VOLTAGE:2||GRAPHENE OXIDE:2||ADSORPTION:2||MICROLENS ARRAYS:2||SiC:2||(NH4)(2)Sx treatment:2||Pd:2||Xray photoemission spectroscopy:2||NUCLEATION:2||MOLECULARBEAM EPITAXY:2||SUBSTRATE:2||Fermi level:2||TiN/Al/SiC:2||EPITAXY:2||GRAPHITE:2||copper oxide:1||GAS SENSOR:1||HUMID ATMOSPHERES:1||GRAPHENE:1||Organic solar cells:1||Transparent conductive film:1||Work function:1||Organic photovoltaic cells:1||DOPED GRAPHENE:1||Xray photoemission spectroscopy (XPS):1||Ultraviolet photoemission spectroscopy (UPS):1||UVozone:1||ZnO nanorods:1||BCP:1||transparent cathode:1||CHARGETRANSPORT:1||(Ga,Mn)N:1||CRYSTALPOLARITY:1||WURTZITE GAN:1||NFACE:1||MICROSTRUCTURE:1||BEHAVIOR:1||DEGRADATION MECHANISM:1||RELIABILITY:1||OUTPUT CONDUCTANCE:1||ANTIFUSE STRUCTURE:1||ORGANIC/METAL INTERFACES:1||METAL:1||Co:1||DILUTED MAGNETIC SEMICONDUCTOR:1||magnetoresistivity:1||INDUCED PHASETRANSITIONS:1||diluted magnetic semiconductors:1||MN:1||nanowires:1||diffusion barrier:1||pGaN:1||flexible devices:1||MOO3:1||SUBWAVELENGTH STRUCTURES:1||PD/AU:1||FORMATE:1||Solar water splitting:1||VOLATILE ORGANICCOMPOUNDS:1||CYTOP:1||Fluoropolymer:1||Indium tin oxide:1||POLYMER PHOTOVOLTAIC CELLS:1||UVvis absorption:1||HIGHLY EFFICIENT:1||nanosphere lithography:1||NANOSPHERE LITHOGRAPHY:1||INTERFACIAL ELECTRONICSTRUCTURES:1||Nface:1||GAN SINGLECRYSTALS:1||PLATINUM:1||isoelectronic doping:1||ALGAN/GAN HEMTS:1||ferromagnetic semiconductor:1||high Al mole fraction:1||fieldeffect transistor:1||TRANSCONDUCTANCE DISPERSION:1||photowashing:1||hotelectron stress:1||S parameter:1||hybrid contact:1||Alq(3) synchrotron radiation photoemission spectroscopy:1||ENERGYLEVEL ALIGNMENT:1||PHOTOEMISSIONSPECTROSCOPY:1||xray photoemission spectroscopy:1||molecular beam epitaxy:1||QUANTUM HALL TRANSITIONS:1||ReO3:1||DISPLAY PANELS:1||NI/AU:1||CORROSIONRESISTANCE:1||LIION BATTERIES:1||Catalytic oxidation:1||Catalyst activity:1||Catalysts:1||Catalytic substrates:1||Water electrolysis:1||Gap states:1||Organic light emitting diodes:1||metaloxides:1||nanowire:1||junctions array:1||LITHOGRAPHY:1||Organic lightemitting diodes:1||Ag agglomeration:1||Rolltoroll imprint:1||Wetting:1||BATHOCUPROINE:1||TRANSITIONMETAL OXIDES:1||PEDOTPSS LAYER:1||Photoluminescence:1||SENSORS:1||CESIUM:1||Polymer solar cells:1||Interface:1||TRANSISTORS:1||DIELECTRICPROPERTIES:1||verticalstructure lightemitting diodes (VLEDs):1||ALQ(3):1||PREFERRED ORIENTATION:1||NANOWIRE:1||Ag:1||nanobranches:1||YIELD:1||TRANSPARENT CONDUCTING FILMS:1||TRIPLET EXCITONS:1||heterostructure fieldeffect transistors (HFETs):1||SF6:1||MICROWAVE:1||ion implantation:1||MOLECULARBEAMEPITAXY:1||GAAS POWER MESFET:1||ohmic contacts:1||HFETS:1||GALLIUM:1||MOBILITY TRANSISTOR:1||GaAs fieldeffect transistor:1||FETS:1||nonalkali glass:1||insulatorquantum hall transition:1||FIELDINDUCED DELOCALIZATION:1||MAGNETICFIELD:1||Raman:1||PHASE:1||AlGaN/GaN HFET:1||Al2O3HfO2 laminated dielectric:1||OXIDE SURFACE:1||FIELDEMISSION CHARACTERISTICS:1||OLEDS:1||EFFICIENT:1||H SOLARCELLS:1||NANOPILLAR ARRAYS:1||COATINGS:1||FEWLAYER GRAPHENE:1||Oxygen plasma:1||ENERGY:1||ELECTRON INJECTION LAYER:1||SELFORGANIZATION:1||Phosphor:1||ABSORPTION:1||FIELDEMISSION PROPERTIES:1||Selective gas detection:1||FUNCTION SURFACE:1||Organic photovoltaic cell:1||SURFACEPLASMONS:1||SCATTERING:1||total internal reflection:1||POLARITY:1||ARRAYS:1||selfconnected:1||MGO(100):1||STATES:1||ICP:1||Pd/Ge/Ti/Au:1||GAASMESFETS:1||leakage current:1||mesa profile:1||twoterminal:1||capacitance DLTS:1||surface leakeage current:1||transconductance dispersion:1||BREAKDOWNVOLTAGE:1||electron injection barrier:1||super density arc plasma ion plating:1||resistance:1||NEUTRAL MANGANESE ACCEPTOR:1||magnetic materials:1||semiconducting indium phosphide:1||2DEG:1||EFFECTIVEMASS:1||ruthenium oxide:1||CODOPED ZNO:1||MOLECULARORIENTATION:1||hydrogen intercalation:1||TIN FILMS:1||SI(111):1||molybdenum oxide:1||Electrodes:1||Hydrogen:1||Nickel:1||Catalytic electrodes:1||Light illumination:1||Oxygen evolution reaction:1||Vanadium oxides:1||electronic nose (Enose):1||SILICON NANOWIRE:1||ANODES:1||reflective ohmic contact:1||SPECTRUM:1||SNO2:1||HOLE:1||PHOTOEMISSION:1||piezoelectricity:1||electron beam evaporation:1||TRANSPORTPROPERTIES:1||Schottky contact:1||SULFUR PASSIVATION:1||light extraction:1||outcoupling efficiency:1||HIGHREFLECTANCE:1||RIE:1||SRPES:1||electrical property:1||Ga vacancies:1||OUTPUT POWER:1||sulfidation mechanism:1||gallium arsenide:1||interface dipole:1||hole injection barrier:1||high k:1||HFET:1||CARBIDE:1||SI(001):1||organic lightemitting diodes (OLEDs):1||work of adhesion:1||LOWTEMPERATURE:1||BROADBAND ANTIREFLECTION:1||Silicon solar cells:1||Rolltoroll fabrication:1||Substrates:1||zinc oxide:1||SENSING PROPERTIES:1||ZNONANOWIRE:1||Graphene transfer:1||vertical lightemitting diodes:1||Molybdenum oxide:1||Dual nanowires:1||CELLS:1||PEDOT:PSS:1||NITROGEN:1||nanostructure:1||finitedifference timedomain (FDTD):1||finitedifference timedomain:1||MoO3:1||selfcatalyst:1||PLASMA DISPLAY PANELS:1||interfacial property:1||OXYGENPLASMA:1||AU2O3:1||NI/AU CONTACT:1||GaAs MESFET:1||Ga antisites:1||threeterminal breakdown:1||HETEROSTRUCTURE:1||METALLIZATIONS:1||cellular radio:1||transmittance:1||DEHAAS OSCILLATIONS:1||SELFASSEMBLED INAS:1||MAGNETICPROPERTIES:1||SAPPHIRE:1||SCHOTTKY CONTACTS:1||TUNGSTEN:1||insulator:1||DRAIN ELECTRODES:1||GOLD:1||rhenium trioxide:1||metallic:1||SILVER:1||COMPRESSIVE STRAIN:1||OXIDIZED NI/AU:1||HOLEEXTRACTION LAYER:1||METALOXIDES:1||SELECTIVITY:1||Embedded Ag grid mesh:1||Nanosilver paste:1||LEVEL ALIGNMENT:1||ELECTRONEGATIVITY:1||Junction:1||ATOMS:1||VAPORPHASE EPITAXY:1||habitual tilting:1||SCHOTTKY DIODES:1||ATOM:1||CONTACT:1||CROSSCOUPLING REACTIONS:1||(GA,MN)N:1||Ni contact:1||electrode effects:1||ICPRIE:1||AlGaAs/InGaAs:1||slow positron beam:1||high electron mobility transistors:1||PdGeAu based ohmic contact:1||MBE:1||controlled atmosphere:1||GAAS(100) CLEANING PROCEDURES:1||GATE ARRAY APPLICATIONS:1||CONJUGATED POLYMERS:1||O(2) plasma treatment:1||IIIV SEMICONDUCTORS:1||electronelectron interactions:1||GAN HETEROSTRUCTURES:1||PL:1||SELFASSEMBLED MONOLAYER:1||perovskites:1||ELECTROLUMINESCENCE:1||PHOTONICCRYSTAL:1||BLUE:1||Adhesive force:1||DISCHARGE:1||OXYGEN VACANCIES:1||STRUCTURED SURFACES:1||FARADAIC EFFICIENCY:1||Oxygen:1||Monolithic devices:1||HIGHQUALITY:1||AG:1||CuO:1||NANOTUBES:1||EXTRACTION LAYERS:1||PLASMA TREATMENT:1||MEDIATED EMISSION:1||BORON:1||SELFASSEMBLED MONOLAYERS:1||INTERFACIAL CHEMISTRY:1||DIPOLE:1||light extraction efficiency:1||lightemitting diodes:1||nanorod:1||NANOBELTS:1||SENSOR:1||OPV:1||ELECTRODE:1||DERIVATIVES:1||PLASMAASSISTED MBE:1||super density are plasma ion plating:1||organic light emitting diode:1||OPERATION:1||xray photoelectron spectroscopy:1||passivation effects:1||organic lightemitting diode:1||ferromagnetic:1||metalorganic chemical vapor deposition:1||INSULATOR:1||OLED:1||hole injection layer:1||GaMnN:1||highk dielectric:1||PLASMA:1||MOLYBDENUM:1||ALLOYS:1||STRESS:1||TENSILE:1||peeloff:1||ION:1||OUTCOUPLING ENHANCEMENT:1||PULSE ELECTRODEPOSITION:1||TEMPERATURE:1||Amorphous silicon:1||Solar cells:1||LIGHTEMITTINGDIODES:24||FILMS:20||GAN:16||ohmic contact:15||GROWTH:13||THINFILMS:12||SURFACE:11||DEVICES:11||LAYER:10||EFFICIENCY:10||PERFORMANCE:10||POWER:9||WORK FUNCTION:8||ANODE:7||FIELDEFFECT TRANSISTORS:7||FABRICATION:7||OXIDE:7||OHMIC CONTACTS:6||GE:6||ELECTRODES:6||INDIUMTINOXIDE:6||microstructure:6||ptype GaN:6||NANORODS:6||DIODES:6||LAYERS:5||POLYMER SOLARCELLS:5||TRANSISTOR:5||GALLIUM NITRIDE:5||ENHANCEMENT:5||PHOTOELECTRONSPECTROSCOPY:5||INTERFACE:5||MORPHOLOGY:4||organic light emitting diodes:4||HEMTS:4||PTYPE GAN:4||DIFFUSION:4||OXIDATION:4||LASERDIODES:4||POLYMER:4||SURFACES:4||PD:4||ROOMTEMPERATURE:4||SOLARCELLS:4||SPECTROSCOPY:4||Hole extraction layer:4||NTYPE GAN:4||HOLE INJECTION:4||PHOTOVOLTAIC DEVICES:4||ZnO:4||EMISSION:4||INJECTION:3||FERROMAGNETISM:3||STABILITY:3||MESFET:3||SILICONCARBIDE:3||LARGEAREA:3||COPPER:3||SILICON:3||NANOPARTICLES:3||SEMICONDUCTORS:3||ELECTRONICPROPERTIES:3||METALELECTRODES:3||indium tin oxide:3||MECHANISM:3||OPTICALPROPERTIES:3||ZNO:3||MODEL:3||PHOTOVOLTAIC CELLS:3||BUFFER LAYER:3||O2 plasma treatment:3||band bending:3||GAAS:3||TRANSPORT LAYERS:3||ITO:3||GaAs:3||SCHOTTKYBARRIER FORMATION:3||LEDs:3||CATHODE:3||EXTRACTION EFFICIENCY:3||synchrotron radiation photoemission spectroscopy:3||Xray photoelectron spectroscopy:3||MOBILITY:3||ALUMINUM:3||thermal stability:3||QUANTUM EFFICIENCY:2||PENTACENE:2||CLUSTERS:2||NGAAS:2||aqua regia treatment:2||DEVICE:2||MAGNETORESISTANCE:2||SCHOTTKY CONTACT:2||3D branched nanowires:2||NANOSTRUCTURES:2||photoelectron spectroscopy:2||Graphene:2||TRANSPARENT ELECTRODES:2||organic solar cells:2||PULSEDLASER DEPOSITION:2||FILM:2||GaN:2||RESISTIVITY:2||PHEMT:2||photoemission spectroscopy:2||hydrothermal growth:2||GRATINGS:2||WORKFUNCTION:2||Iridium oxide:2||P3HT:PCBM:2||CONJUGATED POLYMER:2||highlowdoped GaAs:2||THERMALSTABILITY:2||oblique angle deposition:2||electron transfer:2||DESIGN:2||CRYSTALS:2||DEFECTS:2||Polymer solar cell:2||DLTS SPECTRA:2||PHASES:2||Pd ohmic contact:2||xray scattering:2||INP:2||NGAN:2||interfaces:2||LOWRESISTANCE:2||INTERFACIAL LAYER:2||BLENDS:2||ADHESION:2||NITRIDE:2||sulfidation:2||Organic solar cell:2||IMPROVE