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CHUNG, YOONYOUNG (정윤영)
Dept of Electrical Engineering(전자전기공학과)
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FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE 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COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||FIELDEFFECT TRANSISTORS:6||CIRCUITS:3||DENSITY:2||TRANSPORT:2||SELFASSEMBLED MONOLAYERS:2||FILMS:2||PERFORMANCE:2||THINFILM TRANSISTORS:2||COPPER:2||MEMORY:2||SCATTERING:2||TEMPERATURE:2||CHEMICALVAPORDEPOSITION:2||nchannel transistors:1||DEVICES:1||DIIMIDE:1||CONJUGATED OLIGOMERS:1||SENSORS:1||atomic layer epitaxial growth:1||masks:1||ATOMIC LAYER DEPOSITION:1||SUBSTRATE:1||PAPER:1||organic field effect transistors:1||ORGANIC COMPLEMENTARY CIRCUITS:1||PENTACENE:1||ELECTRONICS:1||PRESSURE SENSOR MATRIX:1||WORK FUNCTION:1||Electric dipoles:1||MOBILITY:1||DISPLAYS:1||SU8:1||organic fieldeffect transistors:1||BUILDINGBLOCKS:1||DERIVATIVES:1||nanotechnology:1||carrier mobility:1||aluminium compounds:1||VOICE:1||FREQUENCY:1||SEMICONDUCTORS:1||nanodielectrics:1||GATE DIELECTRICS:1||GRAPHENE:1||CHARGETRANSPORT:1||STABILITY:1||TRANSPARENT:1||SHIFT:1||selfassembled monolayers:1||
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