Open Access System for Information Sharing

Browse by Researchers

LEE, DONGHWA (이동화)

Div of Advanced Materials Science(첨단재료과학부)

Field(s)

Show more items...

H-INDEX

Chart.

Keyword

MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||MANAGEMENT:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||CSPBX3:1||PHOTODETECTORS:1||TRANSITIONS:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||Ion exchange:1||Temperature:1||Low temperatures:1||EFFICIENT:1||SUPERLATTICES:1||ENERGY:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||IMPROVED STABILITY:1||ELECTRON:1||SIZE:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||FORMAMIDINIUM:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||Stamping:1||Polar aprotic solvent:1||LEAD HALIDE PEROVSKITES:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||Annealing:1||Solar cells:1||

Open Access System for Information Sharing

H-INDEX

Keyword

Publication & Time Cited Count(For the Last 5 years)

Browse

Publication & Time Cited Count
(For the Last 5 years)