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LEE, DONGHWA (이동화)
Dept of Materials Science & Engineering(신소재공학과)
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82-54-279-2160
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LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||LAYER GRAPHENE:1||RAMANSPECTROSCOPY:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||ENDURANCE:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||SUPERLATTICES:1||ENERGY:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||EFFICIENCY:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||MONO LAYER MOS2:1||SEMICONDUCTOR NANOWIRES:1||ION MIGRATION:1||MANAGEMENT:1||THINFILMS:1||
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