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LEE, DONGHWA (이동화)

Div of Advanced Materials Science(첨단재료과학부)

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EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||EFFICIENCY:3||ENERGY:2||ION MIGRATION:2||ENDURANCE:2||Efficiency:2||LAYER GRAPHENE:1||THINFILMS:1||SENSING APPLICATIONS:1||XRAY PHOTOELECTRON:1||GRAPHITE OXIDE:1||Anisotropy:1||Crystalline anisotropy:1||Solar water splitting:1||Surface treatment:1||Precursor solutions:1||Structural studies:1||Theoretical calculations:1||Perovskite solar cells:1||HIGHPERFORMANCE:1||HETEROJUNCTION:1||LAYER:1||FILMS:1||PERFORMANCE:1||DIFFUSION:1||HYBRID:1||CH3NH3PBI3:1||BEHAVIORS:1||OXIDE:1||CH3NH3PBI3 PEROVSKITE:1||GAAS NANOWIRES:1||ZINCBLENDE:1||POLYTYPISM:1||TRANSISTORS:1||DEVICES:1||IODIDE:1||Ion exchange:1||Temperature:1||Low temperatures:1||SUPERLATTICES:1||Heterojunctions:1||Oxide semiconductors:1||Transport properties:1||Bismuth compounds:1||HALIDE PEROVSKITE:1||LENGTHS:1||Ions:1||Perovskite:1||Power conversion efficiencies:1||IIIV NANOWIRES:1||EPITAXIALGROWTH:1||CARBON:1||FULLERENE:1||FUNCTIONALGROUPS:1||Metals:1||Crystallographic orientations:1||Metal oxide semiconductor:1||Photoanode materials:1||HFOX:1||Open circuit voltage:1||Effective removals:1||Ion exchange reactions:1||DEPOSITION:1||SELECTIVE GAS SENSOR:1||DEVICE:1||Carrier transport:1||MOS devices:1||HYSTERESIS:1||MECHANISMS:1||MONO LAYER MOS2:1||Oxide films:1||Semiconductor doping:1||Photoelectrochemicals:1||FILM:1||BASE ADDUCT:1||Stamping:1||Polar aprotic solvent:1||SEMICONDUCTOR NANOWIRES:1||MANAGEMENT:1||RAMANSPECTROSCOPY:1||Photoelectrochemical cells:1||Solar power generation:1||Thin films:1||Electrical conductivity:1||Solartohydrogen conversions:1||PEROVSKITE SOLARCELLS:1||Annealing:1||Solar cells:1||

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