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Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory

Title
Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory
Authors
Lee, SWoo, J황현상Hwang, HKoo, YSong, JMoon, KPark, JCha, ELee, D
Date Issued
Feb-2014
Publisher
American Institute of Physics Inc..
Abstract
In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (I-LRS). To form the tunnel barrier in multiple-layer of TiOx, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of ILRS at off-state (1/2V(Read)). By inserting modified tunnel barrier in resistive random access memory, a high non-linear I-LRS was exhibited with a significantly lowered I-LRS for 1/2V(Read). (C) 2014 AIP Publishing LLC.
URI
http://oasis.postech.ac.kr/handle/2014.oak/9796
DOI
10.1063/1.4864471
ISSN
0003-6951
Article Type
ARTICLE
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