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Cited 10 time in webofscience Cited 12 time in scopus
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Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

Title
Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory
Authors
Lee, DWoo, JPark, SCha, ELee, SHwang, H
POSTECH Authors
Hwang, H
Date Issued
Feb-2014
Publisher
American Institute of Physics Inc..
URI
http://oasis.postech.ac.kr/handle/2014.oak/9795
DOI
10.1063/1.4866671
ISSN
0003-6951
Article Type
Article
Citation
Applied Physics Letters, vol. 104, no. 8, page. 83507, 2014-02
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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