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Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

Title
Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
Authors
Maeng, WJKim, WHKoo, JHLim, SJLee, CSLee, TKim, H
POSTECH Authors
Kim, H
Date Issued
Feb-2010
Publisher
AMER INST PHYSICS
Abstract
Titanium oxide (TiO2) layer was used to control the flatband voltage (V-FB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (D-it), and flatband voltage (V-FB) shift were achieved by PE-ALD TiO2 capping layer.
URI
http://oasis.postech.ac.kr/handle/2014.oak/9711
DOI
10.1063/1.3330929
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 96, no. 8, 2010-02
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 KIM, HYUNGJUN
Dept of Materials Science & Enginrg
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