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Cited 99 time in webofscience Cited 107 time in scopus
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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Title
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Authors
Zhu, DXu, JRNoemaun, ANKim, JKSchubert, EFCrawford, MHKoleske, DD
POSTECH Authors
Kim, JK
Date Issued
Feb-2009
Publisher
AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/9676
DOI
10.1063/1.3089687
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 94, no. 8, 2009-02
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 KIM, JONG KYU
Dept of Materials Science & Enginrg
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