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Thermoelectric power measurements of wide band gap semiconducting nanowires

Title
Thermoelectric power measurements of wide band gap semiconducting nanowires
Authors
Lee, CHYi, GCZuev, YMKim, P
POSTECH Authors
Yi, GC
Date Issued
Jan-2009
Publisher
AMER INST PHYSICS
Abstract
We investigated the temperature-dependent thermoelectric power (TEP) of individual wide band gap ZnO and GaN semiconducting nanowires by fabricating the devices with good Ohmic contacts. In the temperature range of 10-300 K, the measured TEP of both nanowires was linearly dependent on temperature, indicating the degenerate doping nature of these nanowires. The room temperature TEP value of ZnO nanowires was as high as -400 mu V/K while an order of magnitude smaller TEP value was observed in GaN. The negative sign of TEP values shows that electrons are the majority carriers in these wide band gap nanowires. More importantly, in comparison with gate-dependent transport measurements of the nanowire field effect transistors, analysis of temperature-dependent TEP measurements provides a reliable way of estimating the majority carrier concentration of nanowires, where conventional Hall effect measurements cannot be used.
URI
http://oasis.postech.ac.kr/handle/2014.oak/9660
DOI
10.1063/1.3067868
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 94, no. 2, 2009-01
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 YI, GYU CHUL
Dept of Materials Science & Enginrg
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