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Axially graded heteroepitaxy and Raman spectroscopic characterizations of Si1-xGex nanowires

Title
Axially graded heteroepitaxy and Raman spectroscopic characterizations of Si1-xGex nanowires
Authors
Yang, JEPark, WHKim, CJKim, ZHJo, MH
Date Issued
Jan-2008
Publisher
AMER INST PHYSICS
Abstract
We report the axially graded heteroepitaxy of Si1-xGex nanowires, by the kinetic controls of the Au-catalytic decomposition of precursors during chemical vapor syntheses. Transmission electron microscope studies demonstrate that the relative composition of Si and Ge is continuously graded along the uniformly thick nanowires, sharing the same crystal structures with the continuously varying lattices. We also employed a confocal Raman scattering imaging technique, and showed that the local variations in Raman phonon bands, specific to Si and Ge alloying (nu(Si-Si), nu(Si-Ge), and nu(Ge-Ge)), can be spatially and spectrally resolved along the individual nanowires, within the spatial resolution of similar to 500 nm. (c) 2008 American Institute of Physics.
URI
http://oasis.postech.ac.kr/handle/2014.oak/9631
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 92, no. 26, 2008-01
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조문호JO, MOON HO
Dept of Materials Science & Enginrg
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