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Phase transitions via selective elemental vacancy engineering in complex oxide thin films

Title
Phase transitions via selective elemental vacancy engineering in complex oxide thin films
Authors
LEE, SANG AJEONG, HOIDONGWOO, SUNGMINHWANG, JAE YEOLCHOI, SI YOUNGKIM, SUNG DAECHOI, MINSEOKROH, SEULKIYU, HOSUNGHWANG, JUNGSEEKKIN, SUNG WNGCHOI, WOO SEOK
Date Issued
Apr-2016
Publisher
NATURE PUBLISHING GROUP
Abstract
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.
URI
http://oasis.postech.ac.kr/handle/2014.oak/96306
ISSN
2045-2322
Article Type
Article
Citation
Scientific Reports, vol. 6, 2016-04
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