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Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer

Title
Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer
Authors
An, SJYi, GC
POSTECH Authors
Yi, GC
Date Issued
Jan-2007
Publisher
AMER INST PHYSICS
Abstract
The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN/ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.
URI
http://oasis.postech.ac.kr/handle/2014.oak/9581
DOI
10.1063/1.2786852
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 91, no. 12, 2007-01
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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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