Open Access System for Information Sharing

Login Library

 

Article
Cited 2 time in webofscience Cited 2 time in scopus
Metadata Downloads

Steep Slope Field-Effect Transistors With B-Te-Based Ovonic Threshold Switch Device

Title
Steep Slope Field-Effect Transistors With B-Te-Based Ovonic Threshold Switch Device
Authors
유종명이동욱박재혁송정환Hwang, Hyunsang
Date Issued
Jul-2018
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
In this letter, a new ovonic threshold switch (OTS) device based on simple binary Boron-Tellurium (B-Te) film is developed and implemented in series with the source region of a transistor. The newly developed B-Te-based device shows excellent characteristics such as low operating voltage, low leakage current, abrupt turn-on/off slope, fast switching speed, high endurance, and high thermal stability. Due to the great properties of the B-Te OTS device, the implemented transistor exhibits subthreshold swing less than 10 mV/dec and high on/off current ratio greater than 10(5). Moreover, we present a direction of implementing an ideal transistor based on simulation results explaining the effect of off-state resistances and threshold voltages of the OTS devices on the I-DS-V-GS characteristics of the implementer transistor.
URI
http://oasis.postech.ac.kr/handle/2014.oak/95727
ISSN
2168-6734
Article Type
Article
Citation
IEEE Journal of the Electron Devices Society, vol. 6, no. 1, page. 821 - 824, 2018-07
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse