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Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory

Title
Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory
Authors
이상민송정환임석재Chekol, Solomon AmsaluHwang, Hyunsang
Date Issued
Mar-2019
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
In this work, we explore the electrical properties and data retention of Te-based conducive-bridge random-access memory (CBRAM) of ZrxTe1-x/Al2O3/Pt cells. The virgin resistance and forming voltage are decreased with increasing Zr composition (0.5 <= x <= 0.7) and decreasing electrolyte thickness. The resistance of the conducive filament (CF) formed in the Te-CBRAM shows semiconducting behavior that is decreased with increasing temperature, whereas a Cu-based CBRAM shows metallic behavior. Furthermore, the conductance change of Te-based CBRAM, during the filament dissolution step, occurs with lower conductance units than those of Cu/Ag-based CBRAM. The most differentiable characteristics of both devices are the data retention. Te-based CBRAM shows better data stability at high temperature (150 degrees C) than Cu-based device. Accelerated tests (250, 270, and 300 degrees C) were performed to understand the data retention of the Te-CBRAM, yielding excellent retention characteristics (10 years at 177 degrees C) despite its relatively low activation energy (E-a, 1.07 eV) than Cu/Ag- based devices. We believe that the excellent retention properties of Te-based devices are more influenced by the wide effective CF size than by E-a.
URI
http://oasis.postech.ac.kr/handle/2014.oak/95279
ISSN
0038-1101
Article Type
Article
Citation
SOLID-STATE ELECTRONICS, vol. 153, page. 8 - 11, 2019-03
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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